Receive KAIST news by email!
Type your e-mail address here.
by recently order
by view order
New Material for Generating Energy-Efficient Spin Currents
(Professor Byong-Guk Park (left) and Professor Kab-Jin Kim) Magnetic random access memory (MRAM) is emerging as next-generation memory. It allows information to be kept even without an external power supply and its unique blend of high density and high speed operation is driving global semiconductor manufacturers to develop new versions continuously. A KAIST team, led by Professor Byong-Guk Park in the Department of Materials Science and Engineering and Professor Kab-Jin Kim in the Department of Physics, recently has developed a new material which enables the efficient generation of a spin current, the core part of operating MRAM. This new material consisting of ferromagnet-transition metal bilayers can randomly control the direction of the generated spin current unlike the existing ones. They also described a mechanism for spin-current generation at the interface between the bottom ferromagnetic layer and the non-magnetic spacer layer, which gives torques on the top magnetic layer that are consistent with the measured magnetization dependence. When applying this to spin-orbit torque magnetic memory, it shows the increased efficiency of spin torque and generation of the spin current without an external magnetic field. High-speed operation, the distinct feature of spin-orbit torque-based MRAM that carries its non-volatility, can significantly reduce the standby power better than SRAM. This new material will expect to speed up the commercialization of MRAM. The research team said that this magnetic memory will further be applied to mobile, wearable, and IoT devices. This study, conducted in collaboration with Professor Kyung-Jin Lee from Korea University and Dr. Mark Stiles from the National Institute of Standards and Technology in the US, was featured in Nature Materials in March. The research was funded by the Creative Materials Discovery Program of the Ministry of Science and ICT. (Figure: Ferromagnet-transition metal bilayers which can randomly control the direction of the generated spin current)
Extracting Light from Graphite: Core Technology of Graphene Quantum Dots Display Developed
Professor Seokwoo Jeon of the Department of Materials Science and Engineering, Professor Yong-Hoon Cho of the Department of Physics, and Professor Seunghyup Yoo of the Department of Electrical Engineering announced that they were able to develop topnotch graphene quantum dots from graphite. Using the method of synthesizing graphite intercalation compound from graphite with salt and water, the research team developed graphene quantum dots in an ecofriendly way. The quantum dots have a diameter of 5 nanometers with their sizes equal and yield high quantum efficiency. Unlike conventional quantum dots, they are not comprised of toxic materials such as lead or cadmium. As the quantum dots can be developed from materials which can be easily found in the nature, researchers look forward to putting these into mass production at low cost. The research team also discovered a luminescence mechanism of graphene quantum dots and confirmed the possibility of commercial use by developing quantum dot light-emitting diodes with brightness of 1,000 cd/m2, which is greater than that of cellphone displays. Professor Seokwoo Jeon said, “Although quantum dot LEDs have a lower luminous efficiency than existing ones, their luminescent property can be further improved” and emphasized that “using quantum dot displays will allow us to develop not only paper-thin displays but also flexible ones.” Sponsored by Graphene Research Center in KAIST Institute for NanoCentury, the research finding was published online in the April 20th issue of Advanced Optical Materials. Picture 1: Graphene quantum dots and their synthesis Picture 2: Luminescence mechanism of graphene quantum dots Picture 3: Structure of graphene quantum dots LED and its emission
마지막 페이지 1
KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
Copyright(C) 2020, Korea Advanced Institute of Science and Technology,
All Rights Reserved.