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Professor Byong-Guk Park Named Scientist of October
< Professor Byong-Guk Park > Professor Byong-Guk Park from the Department of Materials Science and Engineering was selected as the ‘Scientist of the Month’ for October 2019 by the Ministry of Science and ICT and the National Research Foundation of Korea. Professor Park was recognized for his contributions to the advancement of spin-orbit torque (SOT)-based magnetic random access memory (MRAM) technology. He received 10 million KRW in prize money. A next-generation, non-volatile memory device MRAM consists of thin magnetic films. It can be applied in “logic-in-memory” devices, in which logic and memory functionalities coexist, thus drastically improving the performance of complementary metal-oxide semiconductor (CMOS) processors. Conventional MRAM technology is limited in its ability to increase the operation speed of a memory device while maintaining a high density. Professor Park tackled this challenge by introducing a new material, antiferromagnet (IrMn), that generates a sizable amount of SOT as well as an exchange-bias field, which makes successful data writing possible without an external magnetic field. This research outcome paved the way for the development of MRAM, which has a simple device structure but features high speeds and density. Professor Park said, “I feel rewarded to have forwarded the feasibility and applicability of MRAM. I will continue devoting myself to studying further on the development of new materials that can help enhance the performance of memory devices." (END)
Professor Sang Ouk Kim Receives the "Scientist of the Month Award" from the Korean Government
Professor Sang Ouk Kim of the Department of Materials Science and Engineering, KAIST, received the Scientist of the Month Award in June 2014 for his development of a fundamental technology that allows free control of the properties of carbon-based materials. Since June 1997, the Korean government has awarded monthly one scientist working in industry, universities, or research institutions to recognize his or her research achievements, as well as to promote science and technology. Professor Kim implemented a technique known as doping, which has been used in ordinary semiconductor processes, to demonstrate the physical properties of carbon-based materials. Carbon nanotubes, graphene, and other carbon materials have superior mechanical and electrical properties and are regarded as next-generation materials. However, difficulty in controlling their qualities has made applications in various devices unfavorable. The doping technique in semiconductor production is to artificially introduce impurities into an extremely pure semiconductor for the purpose of modulating its electrical properties. Profess Kim doped elements like nitrogen and boron to enable minute control of the physical properties of carbon-based materials and applied the technique to development of organic solar cells, organic light-emitting devices, and flexible memory. He also increased the application range by using a self-assembly method to change freely the structure of carbon-based materials. Professor Kim has published 53 papers in renowned journals such as Advanced Materials and Nanoletters. He was rewarded further by being invited to write a review paper for the 25th anniversary special edition for Advanced Materials.
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