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KAIST researchers devises a technology to utilize ultrahigh-resolution micro-LED with 40% reduced self-generated heat
In the digitized modern life, various forms of future displays, such as wearable and rollable displays are required. More and more people are wanting to connect to the virtual world whenever and wherever with the use of their smartglasses or smartwatches. Even further, we’ve been hearing about medical diagnosis kit on a shirt and a theatre-hat. However, it is not quite here in our hands yet due to technical limitations of being unable to fit as many pixels as a limited surface area of a glasses while keeping the power consumption at the a level that a hand held battery can supply, all the while the resolution of 4K+ is needed in order to perfectly immerse the users into the augmented or virtual reality through a wireless smartglasses or whatever the device.
KAIST (President Kwang Hyung Lee) announced on the 22nd that Professor Sang Hyeon Kim's research team of the Department of Electrical and Electronic Engineering re-examined the phenomenon of efficiency degradation of micro-LEDs with pixels in a size of micrometers (μm, one millionth of a meter) and found that it was possible to fundamentally resolve the problem by the use of epitaxial structure engineering.
Epitaxy refers to the process of stacking gallium nitride crystals that are used as a light emitting body on top of an ultrapure silicon or sapphire substrate used for μLEDs as a medium.
μLED is being actively studied because it has the advantages of superior brightness, contrast ratio, and lifespan compared to OLED. In 2018, Samsung Electronics commercialized a product equipped with μLED called 'The Wall'. And there is a prospect that Apple may be launching a μLED-mounted product in 2025.
In order to manufacture μLEDs, pixels are formed by cutting the epitaxial structure grown on a wafer into a cylinder or cuboid shape through an etching process, and this etching process is accompanied by a plasma-based process. However, these plasmas generate defects on the side of the pixel during the pixel formation process.
Therefore, as the pixel size becomes smaller and the resolution increases, the ratio of the surface area to the volume of the pixel increases, and defects on the side of the device that occur during processing further reduce the device efficiency of the μLED. Accordingly, a considerable amount of research has been conducted on mitigating or removing sidewall defects, but this method has a limit to the degree of improvement as it must be done at the post-processing stage after the grown of the epitaxial structure is finished.
The research team identified that there is a difference in the current moving to the sidewall of the μLED depending on the epitaxial structure during μLED device operation, and based on the findings, the team built a structure that is not sensitive to sidewall defects to solve the problem of reduced efficiency due to miniaturization of μLED devices. In addition, the proposed structure reduced the self-generated heat while the device was running by about 40% compared to the existing structure, which is also of great significance in commercialization of ultrahigh-resolution μLED displays.
This study, which was led by Woo Jin Baek of Professor Sang Hyeon Kim's research team at the KAIST School of Electrical and Electronic Engineering as the first author with guidance by Professor Sang Hyeon Kim and Professor Dae-Myeong Geum of the Chungbuk National University (who was with the team as a postdoctoral researcher at the time) as corresponding authors, was published in the international journal, 'Nature Communications' on March 17th. (Title of the paper: Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay).
Professor Sang Hyeon Kim said, "This technological development has great meaning in identifying the cause of the drop in efficiency, which was an obstacle to miniaturization of μLED, and solving it with the design of the epitaxial structure.“ He added, ”We are looking forward to it being used in manufacturing of ultrahigh-resolution displays in the future."
This research was carried out with the support of the Samsung Future Technology Incubation Center.
Figure 1. Image of electroluminescence distribution of μLEDs fabricated from epitaxial structures with quantum barriers of different thicknesses while the current is running
Figure 2. Thermal distribution images of devices fabricated with different epitaxial structures under the same amount of light.
Figure 3. Normalized external quantum efficiency of the device fabricated with the optimized epitaxial structure by sizes.
2023.03.23 View 11582 -
KAIST researchers develops a tech to enable production of ultrahigh-resolution LED with sub-micrometer scale pixels
Ultrahigh-resolution displays are an essential element for developing next-generation electronic products such as virtual reality (VR), augmented reality (AR), and smart watches, and can be applied not only to head-mounted displays, but also to smart glasses and smart lenses. The technology developed through this research is expected to be used to make such next-generation ultrahigh-resolution displays and other various sub-micro optoelectronic devices.
KAIST (President Kwang Hyung Lee) announced on the 22nd that Professor Yong-Hoon Cho's research team of KAIST Department of Physics developed the core technology for an ultrahigh resolution light-emitting diode (LED) display that can realize 0.5 micron-scale pixels smaller than 1/100 of the average hair thickness (about 100 microns) using focused ion beams.
Commonly, pixelation of ultrahigh-resolution LED displays usually relies on the etching method that physically cuts the area around the pixel, but as the pixel becomes smaller due to the occurrence of various defects around it, leading to side-effects of having leakage of current increased and light-emission efficiency decreased. In addition, various complex processes such as patterning for pixelation and post-processing for prevention of leakage current are required.
Professor Yong-Hoon Cho's research team developed a technology that can create pixels down to the size of a microscale without the complicated pre- and post-processing using a focused ion beam. This method has the advantage of being able to freely set the shape of the emitting pixel without causing any structural deformation on the material surface by controlling the intensity of the focused ion beam.
The focused ion beam technology has been widely used for ultrahigh-magnification imaging and nanostructure fabrication in fields such as materials engineering and biology. However, when a focused ion beam is used on a light emitting body such as an LED, light emission of a portion hit by the beam and a surrounding area rapidly decreases, which has been a barrier to fabricating a nano-scale light emitting structure. Upon facing this issue, Professor Cho's research team began the research on the idea that if they turned things around to use these problematic phenomena, they can be used in ultra-fine pixelation method on a sub-micron scale.
The research team used a focused ion beam whose intensity was softened to the extent that the surface was not shaved, and found that not only the light-emission rapidly decreased in the area hit by the focused ion beam, but also the local resistance greatly increased. As a result, while the surface of the LED is kept flat, the portion hit by the focused ion beam is optically and electrically isolated, enabling pixelation for independent operation.
Professor Yong-Hoon Cho, who led the research, said, “We have newly developed a technology that can create sub-micron-scale pixels without complicated processes using a focused ion beam, which will be a base technology that can be applied to next-generation ultrahigh-resolution displays and nano-photoelectronic devices.”
This research in which the Master's student Ji-Hwan Moon and the Ph.D. student Baul Kim of KAIST Department of Physics participated as co-first authors, was carried out with the support of the National Research Foundation of Korea's Support Program for Mid-Career Researchers and the Institute of Information and Communications Technology Planning and Evaluation. It was published online in 'Advanced Materials' on February 13, and was also selected as the internal cover of the next offline edition. (Title: Electrically Driven Sub-Micron Light-Emitting Diode Arrays Using Maskless and Etching-Free Pixelation)
Figure 1. Schematic diagram of the technology for ultrahigh density sub-micron-sized pixels through He focused ion beam (FIB) irradiation on an LED device
Figure 2. Ultra-high-density pixelation technology of micro light-emitting diodes (μLED) through He focused ion beam (FIB) irradiation
Figure 3. Rectangular pixels of different sizes (surface structure picture and luminescence picture) realized by a focused ion beam. Luminescence pictures of pixel arrays ranging in size from 20 µm x 20 µm to 0.5 µm x 0.5 µm, with surface flatness maintained.
2023.03.08 View 11946 -
KAIST Team Develops Surface-Lighting MicroLED Patch with Significant Melanogenesis Inhibition Effect
A KAIST research team led by Ph.d candidate Jae Hee Lee and Professor Keon Jae Lee from the Department of Materials Science and Engineering has developed a surface-lighting microLED patch for UV-induced melanogenesis inhibition.
Melanin is brown or dark pigments existing in the skin, which can be abnormally synthesized by external UV or stress. Since the excessive melanin leads to skin diseases such as spots and freckles, proper treatment is required to return normal skin condition.
Recently, LED-based photo-stimulators have been released for skin care, however, their therapeutic effect is still controversial. Since conventional LED stimulators cannot conformally attach to the human skin, distance-induced side effects are caused by light loss and high heat transfer. To achieve effective phototreatment, the LED stimulator needs to be irradiated in contact with the human skin surface, enabling proper and uniform light deliver to the dermis with minimal optical loss.
In this work, the research team fabricated skin-attachable surface-lighting microLED (SµLED, 4 × 4 cm2) patch by utilizing a thousand of microLED chips and silica-embedded light diffusion layer. 100 µm-sized LED chips are vertically-interconnected for high flexibility and low heat generation, allowing its long-term operation on the human skin.
< Image 1. The overall concept of SµLED patch. a) SµLED patch operated on the human skin. b) Schematic illustration of SµLED patch structure. c) 4 × 4 cm2-sized SµLED patch. d) Schematic illustration of the advantages of SµLED patch such as efficient light delivery, low heat generation, and surface-lighting irradiation. >
The research team confirmed melanogenesis inhibition by irradiating the SµLED patch and the conventional LED (CLED) on the artificial human skin and mice dorsal skin. The SµLED-treated groups of human cells and mouse tissues showed minimal epidermal photo-toxicity and consistently effective reduction in synthesized melanin, compared to CLED-treated groups. In addition, significant suppression of proteins/catalysts expression involved in melanin synthesis such as MITF (microphthalmia-associated transcription factor), Melan-A and tyrosinase was verified.
< Image 2. The efficacy of melanogenesis inhibition on 3D human skin cells. a). Different irradiation conditions for a-MSH (major factor to stimulate melanin synthesis) treated cells. b) The ratio of pigmented area to total epidermis area. c) Relative variance of melanin level in 1 cm2-sized skin cells. A low variance means that melanin is evenly distributed, and a high variance means that the melanin is irregularly distributed. d) Optical images after in vitro experiments for 12 days. Scale bar, 1cm. e) Histological analysis of 3D skin, showing the greatest reduction in melanin after SµLED irradiation. Scale bar, 20 µm. >
< Image 3. The efficacy of melanogenesis inhibition on mouse dorsal skin. a) Optical images of mice dorsal skin after photo-treatment for 20 days. b) Histological analysis of mice dorsal skin. Less brown color means less expression of protein/catalysis involved in melanin synthesis. Scale bar, 50 µm. >
Prof. Keon Jae Lee said, “Our inorganic-based SµLED patch has outstanding characteristics in light efficiency, reliability, and durability. The SµLED patch is expected to give a great impact on the cosmetic field by reducing side effects and maximizing phototherapeutic effects.” The core technology of cosmetic SµLED has been transferred to Fronics co., Ltd, founded by Prof. Lee. Fronics is building foundry and equipment for mass production of SµLED masks for whole face cover and plans to release the products in March next year.
This paper entitled “Wearable Surface-Lighting Micro-Light-Emitting Diode Patch for Melanogenesis Inhibition” was published in the November 2022 issue of Advanced Healthcare Materials.
2022.11.22 View 17765 -
The Medici Effect: Highly Flexible, Wearable Displays Born in KAIST
(Ph.D. candidate Seungyeop Choi)
How do you feel when technology you saw in a movie is made into reality? Collaboration between the electrical engineering and textile industries has made TVs or smartphone screens displaying on clothing a reality.
A research team led by Professor Kyung Cheol Choi at the School of Electrical Engineering presented wearable displays for various applications including fashion, IT, and healthcare. Integrating OLED (organic light-emitting diode) into fabrics, the team developed the most highly flexible and reliable technology for wearable displays in the world.
Recently, information displays have become increasingly important as they construct the external part of smart devices for the next generation. As world trends are focusing on the Internet of Things (IoTs) and wearable technology, the team drew a lot of attention by making great progress towards commercializing clothing-shaped ‘wearable displays’.
The research for realizing displays on clothing gained considerable attention from academia as well as industry when research on luminescence formed in fabrics was introduced in 2011; however, there was no technology for commercializing it due to its surface roughness and flexibility.
Because of this technical limitation, clothing-shaped wearable displays were thought to be unreachable technology. However, the KAIST team recently succeeded in developing the world’s most highly efficient, light-emitting clothes that can be commercialized.
The research team used two different approaches, fabric-type and fiber-type, in order to realize clothing-shaped wearable displays. In 2015, the team successfully laminated a thin planarization sheet thermally onto fabric to form a surface that is compatible with the OLEDs approximately 200 hundred nanometers thick. Also, the team reported their research outcomes on enhancing the reliability of operating fiber-based OLEDs. In 2016, the team introduced a dip-coating method, capable of uniformly depositing layers, to develop polymer light-emitting diodes, which show high luminance even on thin fabric.
Based on the research performance in 2015 and 2016, Ph.D. candidate Seungyeop Choi took the lead in the research team and succeeded in realizing fabric-based OLEDs, showing high luminance and efficiency while maintaining the flexibility of the fabric.
The long-term reliability of this wearable device that has the world’s best electrical and optical characteristics was verified through their self-developed, organic and inorganic encapsulation technology. According to the team, their wearable device facilitates the operation of OLEDs even at a bending radius of 2mm.
According to Choi, “Having wavy structures and empty spaces, fiber plays a significant role in lowering the mechanical stress on the OLEDs.”
“Screen displayed on our daily clothing is no longer a future technology,” said Professor Choi. “Light-emitting clothes will have considerable influence on not only the e-textile industry but also the automobile and healthcare industries.”
Moreover, the research team remarked, “It means a lot to realize clothing-shaped OLEDs that have the world’s best luminance and efficiency. It is the most flexible fabric-based light-emitting device among those reported. Moreover, noting that this research carried out an in-depth analysis of the mechanical characteristics of the clothing-spared, light-emitting device, the research performance will become a guideline for developing the fabric-based electronics industry.”
This research was funded by the Ministry of Trade, Industry and Energy and collaborated with KOLON Glotech, INC. The research performance was published in Scientific Reports in July.
(OLEDs operating in fabrics)
(Current-voltage-luminance and efficiency of the highly flexible, fabric-based OLEDs;Image of OLEDs after repetitive bending tests;Verification of flexibility through mechanical simulation)
2017.08.24 View 18841 -
Making Graphene Using Laser-induced Phase Separation
IBS & KAIST researchers clarify how laser annealing technology can lead to the production of ultrathin nanomaterials
All our smart phones have shiny flat AMOLED (active-matrix organic light-emitting diode) displays. Behind each single pixel of these displays hides at least two silicon transistors which are mass-manufactured using laser annealing technology. While the traditional methods to make the transistors use temperature above 1,000°C, the laser technique reaches the same results at low temperatures even on plastic substrates (melting temperature below 300°C). Interestingly, a similar procedure can be used to generate crystals of graphene. Graphene is a strong and thin nano-material made of carbon, its electric and heat-conductive properties have attracted the attention of scientists worldwide.
Professor Keon Jae Lee of the Materials Science and Engineering Department at KAIST and his research group at the Center for Multidimensional Carbon Materials within the Institute for Basic Science (IBS), as well as Professor Sung-Yool Choi of the Electrical Engineering School at KAIST and his research team discovered graphene synthesis mechanism using laser-induced solid-state phase separation of single-crystal silicon carbide (SiC). This study, available in Nature Communications, clarifies how this laser technology can separate a complex compound (SiC) into its ultrathin elements of carbon and silicon.
Although several fundamental studies presented the effect of excimer lasers in transforming elemental materials like silicon, the laser interaction with more complex compounds like SiC has rarely been studied due to the complexity of compound phase transition and ultra-short processing time.
With high resolution microscope images and molecular dynamic simulations, scientists found that a single-pulse irradiation of xenon chloride excimer laser of 30 nanoseconds melts SiC, leading to the separation of a liquid SiC layer, a disordered carbon layer with graphitic domains (about 2.5 nm thick) on top surface and a polycrystalline silicon layer (about 5 nm) below carbon layer. Giving additional pulses causes the sublimation of the separated silicon, while the disordered carbon layer is transformed into a multilayer graphene.
"This research shows that the laser material interaction technology can be a powerful tool for the next generation of two dimensional nanomaterials," said Professor Lee.
Professor Choi added: "Using laser-induced phase separation of complex compounds, new types of two dimensional materials can be synthesized in the future."
High-resolution transmission electron microscopy shows that after just one laser pulse of 30 nanoseconds, the silicon carbide (SiC) substrate is melted and separates into a carbon and a silicon layer. More pulses cause the carbon layer to organize into graphene and the silicon to leave as gas.
Molecular dynamics simulates the graphene formation mechanism. The carbon layer on the top forms because the laser-induced liquid SiC (SiC (l)) is unstable.
(Press Release by Courtesy of the Institute for Basic Science (IBS))
2016.12.01 View 14921 -
Graphene-Based Transparent Electrodes for Highly Efficient Flexible OLEDs
A Korean research team developed an ideal electrode structure composed of graphene and layers of titanium dioxide and conducting polymers, resulting in highly flexible and efficient OLEDs.
The arrival of a thin and lightweight computer that even rolls up like a piece of paper will not be in the far distant future. Flexible organic light-emitting diodes (OLEDs), built upon a plastic substrate, have received greater attention lately for their use in next-generation displays that can be bent or rolled while still operating.
A Korean research team led by Professor Seunghyup Yoo from the School of Electrical Engineering, KAIST and Professor Tae-Woo Lee from the Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) has developed highly flexible OLEDs with excellent efficiency by using graphene as a transparent electrode (TE) which is placed in between titanium dioxide (TiO2) and conducting polymer layers. The research results were published online on June 2, 2016 in Nature Communications.
OLEDs are stacked in several ultra-thin layers on glass, foil, or plastic substrates, in which multi-layers of organic compounds are sandwiched between two electrodes (cathode and anode). When voltage is applied across the electrodes, electrons from the cathode and holes (positive charges) from the anode draw toward each other and meet in the emissive layer. OLEDs emit light as an electron recombines with a positive hole, releasing energy in the form of a photon. One of the electrodes in OLEDs is usually transparent, and depending on which electrode is transparent, OLEDs can either emit from the top or bottom.
In conventional bottom-emission OLEDs, an anode is transparent in order for the emitted photons to exit the device through its substrate. Indium-tin-oxide (ITO) is commonly used as a transparent anode because of its high transparency, low sheet resistance, and well-established manufacturing process. However, ITO can potentially be expensive, and moreover, is brittle, being susceptible to bending-induced formation of cracks.
Graphene, a two-dimensional thin layer of carbon atoms tightly bonded together in a hexagonal honeycomb lattice, has recently emerged as an alternative to ITO. With outstanding electrical, physical, and chemical properties, its atomic thinness leading to a high degree of flexibility and transparency makes it an ideal candidate for TEs. Nonetheless, the efficiency of graphene-based OLEDs reported to date has been, at best, about the same level of ITO-based OLEDs.
As a solution, the Korean research team, which further includes Professors Sung-Yool Choi (Electrical Engineering) and Taek-Soo Kim (Mechanical Engineering) of KAIST and their students, proposed a new device architecture that can maximize the efficiency of graphene-based OLEDs. They fabricated a transparent anode in a composite structure in which a TiO2 layer with a high refractive index (high-n) and a hole-injection layer (HIL) of conducting polymers with a low refractive index (low-n) sandwich graphene electrodes. This is an optical design that induces a synergistic collaboration between the high-n and low-n layers to increase the effective reflectance of TEs. As a result, the enhancement of the optical cavity resonance is maximized. The optical cavity resonance is related to the improvement of efficiency and color gamut in OLEDs. At the same time, the loss from surface plasmon polariton (SPP), a major cause for weak photon emissions in OLEDs, is also reduced due to the presence of the low-n conducting polymers.
Under this approach, graphene-based OLEDs exhibit 40.8% of ultrahigh external quantum efficiency (EQE) and 160.3 lm/W of power efficiency, which is unprecedented in those using graphene as a TE. Furthermore, these devices remain intact and operate well even after 1,000 bending cycles at a radius of curvature as small as 2.3 mm. This is a remarkable result for OLEDs containing oxide layers such as TiO2 because oxides are typically brittle and prone to bending-induced fractures even at a relatively low strain. The research team discovered that TiO2 has a crack-deflection toughening mechanism that tends to prevent bending-induced cracks from being formed easily.
Professor Yoo said, “What’s unique and advanced about this technology, compared with previous graphene-based OLEDs, is the synergistic collaboration of high- and low-index layers that enables optical management of both resonance effect and SPP loss, leading to significant enhancement in efficiency, all with little compromise in flexibility.” He added, “Our work was the achievement of collaborative research, transcending the boundaries of different fields, through which we have often found meaningful breakthroughs.”
Professor Lee said, “We expect that our technology will pave the way to develop an OLED light source for highly flexible and wearable displays, or flexible sensors that can be attached to the human body for health monitoring, for instance.”
The research paper is entitled “Synergistic Electrode Architecture for Efficient Graphene-based Flexible Organic Light-emitting Diodes” (DOI. 10.1038/NCOMMS11791). The lead authors are Jae-Ho Lee, a Ph.D. candidate at KAIST; Tae-Hee Han, a Ph.D. researcher at POSTECH; and Min-Ho Park, a Ph.D. candidate at POSTECH.
This study was supported by the Basic Science Research Program of the National Research Foundation of Korea (NRF) through the Center for Advanced Flexible Display (CAFDC) funded by the Ministry of Science, ICT and Future Planning (MSIP); by the Center for Advanced Soft-Electronics funded by the MSIP as a Global Frontier Project; by the Graphene Research Center Program of KAIST; and by grants from the IT R&D Program of the Ministry of Trade, Industry and Energy of Korea (MOTIE).
Figure 1: Application of Graphene-based OLEDs
This picture shows an OLED with the composite structure of TiO2/graphene/conducting polymer electrode in operation. The OLED exhibits 40.8% of ultrahigh external quantum efficiency (EQE) and 160.3 lm/W of power efficiency. The device prepared on a plastic substrate shown in the right remains intact and operates well even after 1,000 bending cycles at a radius of curvature as small as 2.3 mm.
Figure 2: Schematic Device Structure of Graphene-based OLEDs
This picture shows the new architecture to develop highly flexible OLEDs with excellent efficiency by using graphene as a transparent electrode (TE).
2016.06.07 View 17774 -
Professor Keon-Jae Lee Lectures at IEDM and ISSCC Forums
Professor Keon-Jae Lee of KAIST’s Materials Science and Engineering Department delivered a speech at the 2015 Institute of Electrical and Electronics Engineers (IEEE) International Electron Devices Meeting (IEDM) held on December 7-9, 2015 in Washington, D.C.
He will also present a speech at the 2016 International Solid-State Circuits Conference scheduled on January 31-February 4, 2016 in San Francisco, California.
Both professional gatherings are considered the world’s most renowned forums in electronic devices and semiconductor technology. It is rare for a Korean researcher to be invited to speak at these global conferences.
Professor Lee was recognized for his research on flexible NAND chips. The Korea Times, an English language daily newspaper in Korea, reported on his participation in the forums and his recent work. An excerpt of the article follows below:
“KAIST Professor to Lecture at Renowned Tech Forums”
By Lee Min-hyung, The Korea Times, November 26, 2015
Recently he has focused on delivering technologies for producing flexible materials that can be applied to everyday life. The flexible NAND flash memory chips are expected to be widely used for developing flexible handsets. His latest research also includes flexible light-emitting diodes (LED) for implantable biomedical applications.
Lee is currently running a special laboratory focused on developing new flexible nano-materials. The research group is working to develop what it calls “self-powered flexible electronic systems” using nanomaterials and electronic technology.
Lee’s achievement with flexible NAND chips was published in the October edition of Nano Letters, the renowned U.S.-based scientific journal.
He said that flexible memory chips will be used to develop wearable computers that can be installed anywhere.
2015.11.26 View 17481