Keon+Jae+Lee
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Flexible Piezoelectric Acoustic Sensors for Speaker Recognition
A KAIST research team led by Professor Keon Jae Lee from the Department of Material Science and Engineering has developed a machine learning-based acoustic sensor for speaker recognition.
Acoustic sensors were spotlighted as one of the most intuitive bilateral communication devices between humans and machines. However, conventional acoustic sensors use a condenser-type device for measuring capacitance between two conducting layers, resulting in low sensitivity, short recognition distance, and low speaker recognition rates.
The team fabricated a flexible piezoelectric membrane by mimicking the basilar membrane in the human cochlear. Resonant frequencies vibrate corresponding regions of the trapezoidal piezoelectric membrane, which converts voice to electrical signal with a highly sensitive self-powered acoustic sensor.
This multi-channel piezoelectric acoustic sensor exhibits sensitivity more than two times higher and allows for more abundant voice information compared to conventional acoustic sensors, which can detect minute sounds from farther distances. In addition, the acoustic sensor can achieve a 97.5% speaker recognition rate using a machine learning algorithm, reducing by 75% error rate than the reference microphone.
AI speaker recognition is the next big thing for future individual customized services. However, conventional technology attempts to improve recognition rates by using software upgrades, resulting in limited speaker recognition rates. The team enhanced the speaker recognition system by replacing the existing hardware with an innovative flexible piezoelectric acoustic sensor. Further software improvement of the piezoelectric acoustic sensor will significantly increase the speaker and voice recognition rate in diverse environments.
Professor Lee said, “Highly sensitive self-powered acoustic sensors for speaker recognition can be used for personalized voice services such as smart home appliances, AI secretaries, always-on IoT, biometric authentication, and FinTech.”
These research “Basilar Membrane-Inspired Self-Powered Acoustic Sensor” and “Machine Learning-based Acoustic Sensor for Speaker Recognition” were published in the September 2018 issue of Nano Energy.
Firgure 1: A flexible piezoelectric acoustic sensor mimicking the human cochlear.
Figure 2: Speaker recognition with a machine learning algorithm.
2018.10.04 View 6777 -
KAIST Team Develops Flexible Blue Vertical Micro LEDs
A KAIST research team developed a crucial source technology that will advance the commercialization of micro LEDs.
Professor Keon Jae Lee from the Department of Materials Science and Engineering and his team have developed a low cost production technology for thin-film blue flexible vertical micro LEDs (f-VLEDs).
In CES 2018, micro LED TV was spotlighted as a strong candidate for replacing the active-matrix organic light-emitting diode (AMOLED) display. Micro LED is a sub-100 um light source for red, green and blue light, which has advantages of outstanding optical output, ultra-low power consumption, fast response speed, and excellent flexibility.
However, the current display industry has utilized the individual chip transfer of millions of LED pixels, causing high production cost. Therefore, the initial market of micro LED TV will be estimated to ~ a hundred thousand dollars for global premium market.
To widely commercialize micro LEDs for mobile and TV displays, the transfer method of thin film micro LEDs requires a one-time transfer of one million LEDs. In addition, highly efficient thin-film blue micro LED is crucial for a full-color display.
The team developed thin-film red f-VLED in previous projects, and now has realized thousands of thin-film blue vertical micro LEDs (thickness < 2 μm) on plastics using a one-time transfer.
The blue GaN f-VLEDs achieved optical power density (~30 mW/mm2) three times higher than that of lateral micro LEDs, and a device lifetime of 100,000 hours by reducing heat generation. These blue f-VLEDs could be conformally attached to the curved skin and brains for wearable devices, and stably operated by wirelessly transferred electrical energy.
Professor Lee said, “For future micro LEDs, the innovative technology of thin-film transfer, efficient devices, and interconnection is necessary. We plan to demonstrate a full-color micro LED display in smart watch sizes by the end of this year. ”
This research “ Monolithic Flexible Vertical GaN Light‐Emitting Diodes for a Transparent Wireless Brain Optical Stimulator ” led by a PhD candidate Han Eol Lee was published in the June 2018 issue of Advanced Materials.
Figure 1. Schematic image of wireless thin-film blue f-VLED arrays on the brain surface
Figure 2. Photo of high-performance and high-density blue f-VLED arrays
2018.06.18 View 8289 -
Developing Flexible Vertical Micro LED
A KAIST research team led by Professor Keon Jae Lee from the Department of Materials Science and Engineering and Professor Daesoo Kim from the Department of Biological Sciences has developed flexible vertical micro LEDs (f-VLEDs) using anisotropic conductive film (ACF)-based transfer and interconnection technology. The team also succeeded in controlling animal behavior via optogenetic stimulation of the f-VLEDs.
Flexible micro LEDs have become a strong candidate for the next-generation display due to their ultra-low power consumption, fast response speed, and excellent flexibility. However, the previous micro LED technology had critical issues such as poor device efficiency, low thermal reliability, and the lack of interconnection technology for high-resolution micro LED displays.
The research team has designed new transfer equipment and fabricated a f-VLED array (50ⅹ50) using simultaneous transfer and interconnection through the precise alignment of ACF bonding process. These f-VLEDs (thickness: 5 ㎛, size: below 80 ㎛) achieved optical power density (30 mW/mm2) three times higher than that of lateral micro LEDs, improving thermal reliability and lifetime by reducing heat generation within the thin film LEDs.
These f-VLEDs can be applied to optogenetics for controlling the behavior of neuron cells and brains. In contrast to the electrical stimulation that activates all of the neurons in brain, optogenetics can stimulate specific excitatory or inhibitory neurons within the localized cortical areas of the brain, which facilitates precise analysis, high-resolution mapping, and neuron modulation of animal brains. (Refer to the author’s previous ACS Nano paper of “Optogenetic Mapping of Functional Connectivity in Freely Moving Mice via Insertable Wrapping Electrode Array Beneath the Skull.” )
In this work, they inserted the innovative f-VLEDs into the narrow space between the skull and the brain surface and succeeded in controlling mouse behavior by illuminating motor neurons on two-dimensional cortical areas located deep below the brain surface.
Professor Lee said, “The flexible vertical micro LED can be used in low-power smart watches, mobile displays, and wearable lighting. In addition, these flexible optoelectronic devices are suitable for biomedical applications such as brain science, phototherapeutic treatment, and contact lens biosensors.”
He recently established a startup company ( FRONICS Inc. ) based on micro LED technology and is looking for global partnerships for commercialization. This result entitled “ Optogenetic Control of Body Movements via Flexible Vertical Light-Emitting Diodes on Brain Surface ” was published in the February 2018 issue of Nano Energy.
Figure 1. Comparison of μ-LEDs Technology
2018.01.29 View 12082 -
Improving Silver Nanowires for FTCEs with Flash Light Interactions
Flexible transparent conducting electrodes (FTCEs) are an essential element of flexible optoelectronics for next-generation wearable displays, augmented reality (AR), and the Internet of Things (IoTs). Silver nanowires (Ag NWs) have received a great deal of attention as future FTCEs due to their great flexibility, material stability, and large-scale productivity. Despite these advantages, Ag NWs have drawbacks such as high wire-to-wire contact resistance and poor adhesion to substrates, resulting in severe power consumption and the delamination of FTCEs.
A research team led by Professor Keon Jae Lee of the Materials Science and Engineering Department at KAIST and Dr. Hong-Jin Park from BSP Inc., has developed high-performance Ag NWs (sheet resistance ~ 5 Ω/sq, transmittance 90 % at λ = 550 nm) with strong adhesion on plastic (interfacial energy of 30.7 J∙m-2) using flash light-material interactions.
The broad ultraviolet (UV) spectrum of a flash light enables the localized heating at the junctions of nanowires (NWs), which results in the fast and complete welding of Ag NWs. Consequently, the Ag NWs demonstrate six times higher conductivity than that of the pristine NWs. In addition, the near-infrared (NIR) of the flash lamp melted the interface between the Ag NWs and a polyethylene terephthalate (PET) substrate, dramatically enhancing the adhesion force of the Ag NWs to the PET by 310 %.
Professor Lee said, “Light interaction with nanomaterials is an important field for future flexible electronics since it can overcome thermal limit of plastics, and we are currently expanding our research into light-inorganic interactions.”
Meanwhile, BSP Inc., a laser manufacturing company and a collaborator of this work, has launched new flash lamp equipment for flexible applications based on the Professor Lee’s research.
The results of this work entitled “Flash-Induced Self-Limited Plasmonic Welding of Ag NW Network for Transparent Flexible Energy Harvester (DOI: 10.1002/adma.201603473)” were published in the February 2, 2017 issue of Advanced Materials as the cover article.
Professor Lee also contributed an invited review in the same journal of the April 3, 2017 online issue, “Laser-Material Interactions for Flexible Applications (DOI:10.1002/adma.201606586),” overviewing the recent advances in light interactions with flexible nanomaterials.
References
[1] Advanced Materials, February 2, 2017, Flash-Induced Self-Limited Plasmonic Welding of Ag NW network for Transparent Flexible Energy Harvester http://onlinelibrary.wiley.com/doi/10.1002/adma.201603473/epdf
[2] Advanced Materials, April 3, 2017, Laser-Material Interactions for Flexible Applications
http://onlinelibrary.wiley.com/doi/10.1002/adma.201606586/abstract
For further inquiries on research:
keonlee@kaist.ac.kr (Keon Jae Lee), hjpark@bsptech.co.kr (Hong-Jin Park)
Picture 1: Artistic Rendtition of Light Interaction with Nanomaterials
(This image shows flash-induced plasmonic interactions with nanowires to improve silver nanowires (Ag NWs).)
Picture 2: Ag NW/PET Film
(This picture shows the Ag NWs on a polyethylene terephthalate (PET) film after the flash-induced plasmonic thermal process.)
2017.04.05 View 9507 -
Making Graphene Using Laser-induced Phase Separation
IBS & KAIST researchers clarify how laser annealing technology can lead to the production of ultrathin nanomaterials
All our smart phones have shiny flat AMOLED (active-matrix organic light-emitting diode) displays. Behind each single pixel of these displays hides at least two silicon transistors which are mass-manufactured using laser annealing technology. While the traditional methods to make the transistors use temperature above 1,000°C, the laser technique reaches the same results at low temperatures even on plastic substrates (melting temperature below 300°C). Interestingly, a similar procedure can be used to generate crystals of graphene. Graphene is a strong and thin nano-material made of carbon, its electric and heat-conductive properties have attracted the attention of scientists worldwide.
Professor Keon Jae Lee of the Materials Science and Engineering Department at KAIST and his research group at the Center for Multidimensional Carbon Materials within the Institute for Basic Science (IBS), as well as Professor Sung-Yool Choi of the Electrical Engineering School at KAIST and his research team discovered graphene synthesis mechanism using laser-induced solid-state phase separation of single-crystal silicon carbide (SiC). This study, available in Nature Communications, clarifies how this laser technology can separate a complex compound (SiC) into its ultrathin elements of carbon and silicon.
Although several fundamental studies presented the effect of excimer lasers in transforming elemental materials like silicon, the laser interaction with more complex compounds like SiC has rarely been studied due to the complexity of compound phase transition and ultra-short processing time.
With high resolution microscope images and molecular dynamic simulations, scientists found that a single-pulse irradiation of xenon chloride excimer laser of 30 nanoseconds melts SiC, leading to the separation of a liquid SiC layer, a disordered carbon layer with graphitic domains (about 2.5 nm thick) on top surface and a polycrystalline silicon layer (about 5 nm) below carbon layer. Giving additional pulses causes the sublimation of the separated silicon, while the disordered carbon layer is transformed into a multilayer graphene.
"This research shows that the laser material interaction technology can be a powerful tool for the next generation of two dimensional nanomaterials," said Professor Lee.
Professor Choi added: "Using laser-induced phase separation of complex compounds, new types of two dimensional materials can be synthesized in the future."
High-resolution transmission electron microscopy shows that after just one laser pulse of 30 nanoseconds, the silicon carbide (SiC) substrate is melted and separates into a carbon and a silicon layer. More pulses cause the carbon layer to organize into graphene and the silicon to leave as gas.
Molecular dynamics simulates the graphene formation mechanism. The carbon layer on the top forms because the laser-induced liquid SiC (SiC (l)) is unstable.
(Press Release by Courtesy of the Institute for Basic Science (IBS))
2016.12.01 View 9941 -
Continuous Roll-Process Technology for Transferring and Packaging Flexible Large-Scale Integrated Circuits
A research team led by Professor Keon Jae Lee from KAIST and by Dr. Jae-Hyun Kim from the Korea Institute of Machinery and Materials (KIMM) has jointly developed a continuous roll-processing technology that transfers and packages flexible large-scale integrated circuits (LSI), the key element in constructing the computer’s brain such as CPU, on plastics to realize flexible electronics.
Professor Lee previously demonstrated the silicon-based flexible LSIs using 0.18 CMOS (complementary metal-oxide semiconductor) process in 2013 (ACS Nano, “In Vivo Silicon-based Flexible Radio Frequency Integrated Circuits Monolithically Encapsulated with Biocompatible Liquid Crystal Polymers”) and presented the work in an invited talk of 2015 International Electron Device Meeting (IEDM), the world’s premier semiconductor forum.
Highly productive roll-processing is considered a core technology for accelerating the commercialization of wearable computers using flexible LSI. However, realizing it has been a difficult challenge not only from the roll-based manufacturing perspective but also for creating roll-based packaging for the interconnection of flexible LSI with flexible displays, batteries, and other peripheral devices.
To overcome these challenges, the research team started fabricating NAND flash memories on a silicon wafer using conventional semiconductor processes, and then removed a sacrificial wafer leaving a top hundreds-nanometer-thick circuit layer. Next, they simultaneously transferred and interconnected the ultrathin device on a flexible substrate through the continuous roll-packaging technology using anisotropic conductive film (ACF). The final silicon-based flexible NAND memory successfully demonstrated stable memory operations and interconnections even under severe bending conditions. This roll-based flexible LSI technology can be potentially utilized to produce flexible application processors (AP), high-density memories, and high-speed communication devices for mass manufacture.
Professor Lee said, “Highly productive roll-process was successfully applied to flexible LSIs to continuously transfer and interconnect them onto plastics. For example, we have confirmed the reliable operation of our flexible NAND memory at the circuit level by programming and reading letters in ASCII codes. Out results may open up new opportunities to integrate silicon-based flexible LSIs on plastics with the ACF packing for roll-based manufacturing.”
Dr. Kim added, “We employed the roll-to-plate ACF packaging, which showed outstanding bonding capability for continuous roll-based transfer and excellent flexibility of interconnecting core and peripheral devices. This can be a key process to the new era of flexible computers combining the already developed flexible displays and batteries.”
The team’s results will be published on the front cover of Advanced Materials (August 31, 2016) in an article entitled “Simultaneous Roll Transfer and Interconnection of Silicon NAND Flash Memory.” (DOI: 10.1002/adma.201602339)
YouTube Link: https://www.youtube.com/watch?v=8OJjAEm27sw
Picture 1: This schematic image shows the flexible silicon NAND flash memory produced by the simultaneous roll-transfer and interconnection process.
Picture 2: The flexible silicon NAND flash memory is attached to a 7 mm diameter glass rod.
2016.09.01 View 10140 -
KAIST Develops Transparent Oxide Thin-Film Transistors
With the advent of the Internet of Things (IoT) era, strong demand has grown for wearable and transparent displays that can be applied to various fields such as augmented reality (AR) and skin-like thin flexible devices. However, previous flexible transparent displays have posed real challenges to overcome, which are, among others, poor transparency and low electrical performance. To improve the transparency and performance, past research efforts have tried to use inorganic-based electronics, but the fundamental thermal instabilities of plastic substrates have hampered the high temperature process, an essential step necessary for the fabrication of high performance electronic devices.
As a solution to this problem, a research team led by Professors Keon Jae Lee and Sang-Hee Ko Park of the Department of Materials Science and Engineering at the KAIST has developed ultrathin and transparent oxide thin-film transistors (TFT) for an active-matrix backplane of a flexible display by using the inorganic-based laser lift-off (ILLO) method. Professor Lee’s team previously demonstrated the ILLO technology for energy-harvesting (Advanced Materials, February 12, 2014) and flexible memory (Advanced Materials, September 8, 2014) devices.
The research team fabricated a high-performance oxide TFT array on top of a sacrificial laser-reactive substrate. After laser irradiation from the backside of the substrate, only the oxide TFT arrays were separated from the sacrificial substrate as a result of reaction between laser and laser-reactive layer, and then subsequently transferred onto ultrathin plastics ( thickness). Finally, the transferred ultrathin-oxide driving circuit for the flexible display was attached conformally to the surface of human skin to demonstrate the possibility of the wearable application. The attached oxide TFTs showed high optical transparency of 83% and mobility of even under several cycles of severe bending tests.
Professor Lee said, “By using our ILLO process, the technological barriers for high performance transparent flexible displays have been overcome at a relatively low cost by removing expensive polyimide substrates. Moreover, the high-quality oxide semiconductor can be easily transferred onto skin-like or any flexible substrate for wearable application.”
These research results, entitled “Skin-Like Oxide Thin-Film Transistors for Transparent Displays,”
(http://onlinelibrary.wiley.com/doi/10.1002/adfm.201601296/abstract) were the lead article published in the July 2016 online issue of Wiley’s Advanced Functional Materials.
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References
[1] Advanced Materials, February 12, 2014, Highly-efficient, Flexible Piezoelectric PZT Thin Film Nanogenerator on Plastic Substrates
(http://onlinelibrary.wiley.com/doi/10.1002/adma.201305659/abstract)
[2] Advanced Materials, September 8, 2014, Flexible Crossbar-structured Resistive Memory Arrays on Plastic Substartes via Inorganic-based Laser Lift-off
(http://onlinelibrary.wiley.com/doi/10.1002/adma.201402472/abstract)
Picture 1: A Schamatic Image of Ultrathin, Flexible, and Transparent Oxide Thin-film Transistors
This image shows ultrathin, flexible, and transparent oxide thin-film transistors produced via the ILLO process.
Picture 2: Application of Uultrathin, Flexible, and Transparent Oxide Thin-film Transistors
This picture shows ultrathin, flexible, and transparent oxide thin-film transistors attached to a jumper sleeve and human skin.
2016.08.01 View 11593 -
KAIST Team Develops Flexible PRAM
Phase change random access memory (PRAM) is one of the strongest candidates for next-generation nonvolatile memory for flexible and wearable electronics. In order to be used as a core memory for flexible devices, the most important issue is reducing high operating current. The effective solution is to decrease cell size in sub-micron region as in commercialized conventional PRAM. However, the scaling to nano-dimension on flexible substrates is extremely difficult due to soft nature and photolithographic limits on plastics, thus practical flexible PRAM has not been realized yet.
Recently, a team led by Professors Keon Jae Lee and Yeon Sik Jung of the Department of Materials Science and Engineering at KAIST has developed the first flexible PRAM enabled by self-assembled block copolymer (BCP) silica nanostructures with an ultralow current operation (below one quarter of conventional PRAM without BCP) on plastic substrates. BCP is the mixture of two different polymer materials, which can easily create self-ordered arrays of sub-20 nm features through simple spin-coating and plasma treatments. BCP silica nanostructures successfully lowered the contact area by localizing the volume change of phase-change materials and thus resulted in significant power reduction. Furthermore, the ultrathin silicon-based diodes were integrated with phase-change memories (PCM) to suppress the inter-cell interference, which demonstrated random access capability for flexible and wearable electronics. Their work was published in the March issue of ACS Nano: "Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly."
Another way to achieve ultralow-powered PRAM is to utilize self-structured conductive filaments (CF) instead of the resistor-type conventional heater. The self-structured CF nanoheater originated from unipolar memristor can generate strong heat toward phase-change materials due to high current density through the nanofilament. This ground-breaking methodology shows that sub-10 nm filament heater, without using expensive and non-compatible nanolithography, achieved nanoscale switching volume of phase change materials, resulted in the PCM writing current of below 20 uA, the lowest value among top-down PCM devices. This achievement was published in the June online issue of ACS Nano: "Self-Structured Conductive Filament Nanoheater for Chalcogenide Phase Transition." In addition, due to self-structured low-power technology compatible to plastics, the research team has recently succeeded in fabricating a flexible PRAM on wearable substrates.
Professor Lee said, "The demonstration of low power PRAM on plastics is one of the most important issues for next-generation wearable and flexible non-volatile memory. Our innovative and simple methodology represents the strong potential for commercializing flexible PRAM."
In addition, he wrote a review paper regarding the nanotechnology-based electronic devices in the June online issue of Advanced Materials entitled "Performance Enhancement of Electronic and Energy Devices via Block Copolymer Self-Assembly."
Picture Caption:
Low-power nonvolatile PRAM for flexible and wearable memories enabled by (a) self-assembled BCP silica nanostructures and (b) self-structured conductive filament nanoheater.
2015.06.15 View 14253 -
KAIST Researchers Develops Hyper-Stretchable Elastic-Composite Energy Harvester
A research team led by Professor Keon Jae Lee (http://fand.kaist.ac.kr) of the Department of Materials Science and Engineering at KAIST has developed a hyper-stretchable elastic-composite energy harvesting device called a nanogenerator.
Flexible electronics have come into the market and are enabling new technologies like flexible displays in mobile phone, wearable electronics, and the Internet of Things (IoTs). However, is the degree of flexibility enough for most applications? For many flexible devices, elasticity is a very important issue. For example, wearable/biomedical devices and electronic skins (e-skins) should stretch to conform to arbitrarily curved surfaces and moving body parts such as joints, diaphragms, and tendons. They must be able to withstand the repeated and prolonged mechanical stresses of stretching. In particular, the development of elastic energy devices is regarded as critical to establish power supplies in stretchable applications. Although several researchers have explored diverse stretchable electronics, due to the absence of the appropriate device structures and correspondingly electrodes, researchers have not developed ultra-stretchable and fully-reversible energy conversion devices properly.
Recently, researchers from KAIST and Seoul National University (SNU) have collaborated and demonstrated a facile methodology to obtain a high-performance and hyper-stretchable elastic-composite generator (SEG) using very long silver nanowire-based stretchable electrodes. Their stretchable piezoelectric generator can harvest mechanical energy to produce high power output (~4 V) with large elasticity (~250%) and excellent durability (over 104 cycles). These noteworthy results were achieved by the non-destructive stress- relaxation ability of the unique electrodes as well as the good piezoelectricity of the device components. The new SEG can be applied to a wide-variety of wearable energy-harvesters to transduce biomechanical-stretching energy from the body (or machines) to electrical energy.
Professor Lee said, “This exciting approach introduces an ultra-stretchable piezoelectric generator. It can open avenues for power supplies in universal wearable and biomedical applications as well as self-powered ultra-stretchable electronics.”
This result was published online in the March issue of Advanced Materials, which is entitled “A Hyper-Stretchable Elastic-Composite Energy Harvester.”
YouTube Link: “A hyper-stretchable energy harvester”
https://www.youtube.com/watch?v=EBByFvPVRiU&feature=youtu.be
Figure: Top row: Schematics of hyper-stretchable elastic-composite generator enabled by very long silver nanowire-based stretchable electrodes.
Bottom row: The SEG energy harvester stretched by human hands over 200% strain.
2015.04.14 View 12816 -
Breakthrough in Flexible Electronics Enabled by Inorganic-based Laser Lift-off
Flexible electronics have been touted as the next generation in electronics in various areas, ranging from consumer electronics to bio-integrated medical devices. In spite of their merits, insufficient performance of organic materials arising from inherent material properties and processing limitations in scalability have posed big challenges to developing all-in-one flexible electronics systems in which display, processor, memory, and energy devices are integrated. The high temperature processes, essential for high performance electronic devices, have severely restricted the development of flexible electronics because of the fundamental thermal instabilities of polymer materials.
A research team headed by Professor Keon Jae Lee of the Department of Materials Science and Engineering at KAIST provides an easier methodology to realize high performance flexible electronics by using the Inorganic-based Laser Lift-off (ILLO).
The ILLO process involves depositing a laser-reactive exfoliation layer on rigid substrates, and then fabricating ultrathin inorganic electronic devices, e.g., high density crossbar memristive memory on top of the exfoliation layer. By laser irradiation through the back of the substrate, only the ultrathin inorganic device layers are exfoliated from the substrate as a result of the reaction between laser and exfoliation layer, and then subsequently transferred onto any kind of receiver substrate such as plastic, paper, and even fabric.
This ILLO process can enable not only nanoscale processes for high density flexible devices but also the high temperature process that was previously difficult to achieve on plastic substrates. The transferred device successfully demonstrates fully-functional random access memory operation on flexible substrates even under severe bending.
Professor Lee said, “By selecting an optimized set of inorganic exfoliation layer and substrate, a nanoscale process at a high temperature of over 1000 °C can be utilized for high performance flexible electronics. The ILLO process can be applied to diverse flexible electronics, such as driving circuits for displays and inorganic-based energy devices such as battery, solar cell, and self-powered devices that require high temperature processes.”
The team’s results were published in the November issue of Wiley’s journal, ‘ Advanced Materials, ’ as a cover article entitled “ Flexible Crossbar-Structured Resistive Memory Arrays on Plastic Substrates via Inorganic-Based Laser Lift-Off.”
( http://onlinelibrary.wiley.com/doi/10.1002/adma.201402472/abstract )
This schematic picture shows the flexible crossbar memory developed via the ILLO process.
This photo shows the flexible RRAM device on a plastic substrate.
2014.11.26 View 9628