(Professor Byong-Guk Park (left) and Professor Kab-Jin Kim)
Magnetic random access memory (MRAM) is emerging as next-generation memory. It allows information to be kept even without an external power supply and its unique blend of high density and high speed operation is driving global semiconductor manufacturers to develop new versions continuously.
A KAIST team, led by Professor Byong-Guk Park in the Department of Materials Science and Engineering and Professor Kab-Jin Kim in the Department of Physics, recently has developed a new material which enables the efficient generation of a spin current, the core part of operating MRAM. This new material consisting of ferromagnet-transition metal bilayers can randomly control the direction of the generated spin current unlike the existing ones.
They also described a mechanism for spin-current generation at the interface between the bottom ferromagnetic layer and the non-magnetic spacer layer, which gives torques on the top magnetic layer that are consistent with the measured magnetization dependence.
When applying this to spin-orbit torque magnetic memory, it shows the increased efficiency of spin torque and generation of the spin current without an external magnetic field. High-speed operation, the distinct feature of spin-orbit torque-based MRAM that carries its non-volatility, can significantly reduce the standby power better than SRAM.
This new material will expect to speed up the commercialization of MRAM. The research team said that this magnetic memory will further be applied to mobile, wearable, and IoT devices.
This study, conducted in collaboration with Professor Kyung-Jin Lee from Korea University and Dr. Mark Stiles from the National Institute of Standards and Technology in the US, was featured in Nature Materials in March. The research was funded by the Creative Materials Discovery Program of the Ministry of Science and ICT.
(Figure: Ferromagnet-transition metal bilayers which can randomly control the direction of the generated spin current)
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