Professor Yang-Kyu Choi of KAIST’s Department of Electrical Engineering and his team presented a research paper entitled “Flexible High-performance Nonvolatile Memory by Transferring GAA Silicon Nanowire SONOS onto a Plastic Substrate” at the conference of the International Electron Devices Meeting that took place on December 15-17, 2014 in San Francisco.
The Electronic Engineering Journal (http://www.eejournal.com/) recently posted an article on the paper:
Electronic Engineering Journal, February 2, 2015
“A Flat-Earth Memory”
Another Way to Make the Brittle Flexible