titanium
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Researchers finds a way to reduce the overheating of semiconductor devices
The demand to shrink the size of semiconductors coupled with the problem of the heat generated at the hot spots of the devices not being effectively dispersed has negatively affected the reliability and durability of modern devices. Existing thermal management technologies have not been up to the task. Thus, the discovery of a new way of dispersing heat by using surface waves generated on the thin metal films over the substrate is an important breakthrough.
KAIST (President Kwang Hyung Lee) announced that Professor Bong Jae Lee's research team in the Department of Mechanical Engineering succeeded in measuring a newly observed transference of heat induced by 'surface plasmon polariton' (SPP) in a thin metal film deposited on a substrate for the first time in the world.
☞ Surface plasmon polariton (SPP) refers to a surface wave formed on the surface of a metal as a result of strong interaction between the electromagnetic field at the interface between the dielectric and the metal and the free electrons on the metal surface and similar collectively vibrating particles.
The research team utilized surface plasmon polaritons (SPP), which are surface waves generated at the metal-dielectric interface, to improve thermal diffusion in nanoscale thin metal films. Since this new heat transfer mode occurs when a thin film of metal is deposited on a substrate, it is highly usable in the device manufacturing process and has the advantage of being able to be manufactured over a large area. The research team showed that the thermal conductivity increased by about 25% due to surface waves generated over a 100-nm-thick titanium (Ti) film with a radius of about 3 cm.
KAIST Professor Bong Jae Lee, who led the research, said, "The significance of this research is that a new heat transfer mode using surface waves over a thin metal film deposited on a substrate with low processing difficulty was identified for the first time in the world. It can be applied as a nanoscale heat spreader to efficiently dissipate heat near the hot spots for easily overheatable semiconductor devices.”
The result has great implications for the development of high-performance semiconductor devices in the future in that it can be applied to rapidly dissipate heat on a nanoscale thin film. In particular, this new heat transfer mode identified by the research team is expected to solve the fundamental problem of thermal management in semiconductor devices as it enables even more effective heat transfer at nanoscale thickness while the thermal conductivity of the thin film usually decreases due to the boundary scattering effect.
This study was published online on April 26 in 'Physical Review Letters' and was selected as an Editors' Suggestion. The research was carried out with support from the Basic Research Laboratory Support Program of the National Research Foundation of Korea.
< Figure. Schematic diagram of the principle of measuring the thermal conductivity of thin Titanium (TI) films and the thermal conductivity of surface plasmon polariton measured on the Ti film >
2023.06.01 View 4626 -
Home-Grown Transparent Thin Film Transistor Developed
KAIST, Aug. 6, 2008 -- A KAIST research team led by Profs. Jae-Woo Park and Seung-Hyup Yoo of the Electrical Engineering Division has developed a home-grown technology to create transparent thin film transistor using titanium dioxide., university authorities said.The KAIST team made the technological advance in collaboration with the LCD Division of Samsung Electronics and the Techno Semichem Co., a local LCD equipment maker. Transparent thin film transistor continues to enjoy a wealth of popularity and intensive research interest since it is used in producing operating circuits including transparent display, active-matrix OLED (AMOLED) display and flexible display.
The new technology is significant in that it is based on a titanium dioxide, the first such attempt in the world, while the technologies patented by the United States and Japan are based on ZnO.
Researchers will continue to work on securing technological reliability and developing a technology to mass-produce in a large-scale chemical vapor deposition equipment for the next couple of years.
"The development of technology to produce transparent thin film transistor will help Korean LCD makers reduce its dependence on foreign technologies, as well as maintain Korea"s status as a leader of the world"s display industry," said Prof. Park.
KAIST has applied for local patent registration of the technology and the process is expected to complete by this October or November. International patents have been also applied for in the U.S., Japan and Europe.
The new technology was introduced in the latest edition of the Electron Device Letters, a journal published by the Institute of Electrical and Electronics Engineers or IEEE, a New York-based international non-profit, professional organization for the advancement of technology related to electricity. It will be presented at the International Display Workshop 2008 on Dec. 5 in Niigata, Japan.
2008.08.07 View 14203