Nano
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No More Touch Issues on Rainy Days! KAIST Develops Human-Like Tactile Sensor
Recent advancements in robotics have enabled machines to handle delicate objects like eggs with precision, thanks to highly integrated pressure sensors that provide detailed tactile feedback. However, even the most advanced robots struggle to accurately detect pressure in complex environments involving water, bending, or electromagnetic interference. A research team at KAIST has successfully developed a pressure sensor that operates stably without external interference, even on wet surfaces like a smartphone screen covered in water, achieving human-level tactile sensitivity.
KAIST (represented by President Kwang Hyung Lee) announced on the 10th of March that a research team led by Professor Jun-Bo Yoon from the School of Electrical Engineering has developed a high-resolution pressure sensor that remains unaffected by external interference such as "ghost touches" caused by moisture on touchscreens.
Capacitive pressure sensors, widely used in touch systems due to their simple structure and durability, are essential components of human-machine interface (HMI) technologies in smartphones, wearable devices, and robots. However, they are prone to malfunctions caused by water droplets, electromagnetic interference, and curves.
To address these issues, the research team investigated the root causes of interference in capacitive pressure sensors. They identified that the "fringe field" generated at the sensor’s edges is particularly susceptible to external disturbances.
The researchers concluded that, to fundamentally resolve this issue, suppressing the fringe field was necessary. Through theoretical analysis, they determined that reducing the electrode spacing to the nanometer scale could effectively minimize the fringe field to below a few percent.
Utilizing proprietary micro/nanofabrication techniques, the team developed a nanogap pressure sensor with an electrode spacing of 900 nanometers (nm). This newly developed sensor reliably detected pressure regardless of the material exerting force and remained unaffected by bending or electromagnetic interference.
Furthermore, the team successfully implemented an artificial tactile system utilizing the developed sensor’s characteristics. Human skin contains specialized pressure receptors called Merkel’s disks. To artificially mimic them, the exclusive detection of pressure was necessary, but hadn’t been achieved by conventional sensors.
Professor Yoon’s research team overcame these challenges, developing a sensor achieving a density comparable to Merkel’s discs and enabling wireless, high-precision pressure sensing.
To explore potential applications, the researcher also developed a force touch pad system, demonstrating its ability to capture pressure magnitude and distribution with high resolution and without interference.
Professor Yoon stated, “Our nanogap pressure sensor operates reliably even in rainy conditions or sweaty environments, eliminating common touch malfunctions. We believe this innovation will significantly enhance everyday user experiences.”
He added, “This technology has the potential to revolutionize various fields, including precision tactile sensors for robotics, medical wearable devices, and next-generation augmented reality (AR) and virtual reality (VR) interfaces.”
The study was led by Jae-Soon Yang (Ph.D.), Myung-Kun Chung (Ph.D. candidate), and Jae-Young Yoo (Assistant Professor at Sungkyunkwan University, a KAIST Ph.D. graduate). The research findings were published in Nature Communications on February 27, 2025. (Paper title: “Interference-Free Nanogap Pressure Sensor Array with High Spatial Resolution for Wireless Human-Machine Interface Applications”, DOI: 10.1038/s41467-025-57232-8)
This study was supported by the National Research Foundation of Korea’s Mid-Career Researcher Program and Leading Research Center Support Program.
2025.03.14 View 1653 -
KAIST Develops Neuromorphic Semiconductor Chip that Learns and Corrects Itself
< Photo. The research team of the School of Electrical Engineering posed by the newly deveoped processor. (From center to the right) Professor Young-Gyu Yoon, Integrated Master's and Doctoral Program Students Seungjae Han and Hakcheon Jeong and Professor Shinhyun Choi >
- Professor Shinhyun Choi and Professor Young-Gyu Yoon’s Joint Research Team from the School of Electrical Engineering developed a computing chip that can learn, correct errors, and process AI tasks
- Equipping a computing chip with high-reliability memristor devices with self-error correction functions for real-time learning and image processing
Existing computer systems have separate data processing and storage devices, making them inefficient for processing complex data like AI. A KAIST research team has developed a memristor-based integrated system similar to the way our brain processes information. It is now ready for application in various devices including smart security cameras, allowing them to recognize suspicious activity immediately without having to rely on remote cloud servers, and medical devices with which it can help analyze health data in real time.
KAIST (President Kwang Hyung Lee) announced on the 17th of January that the joint research team of Professor Shinhyun Choi and Professor Young-Gyu Yoon of the School of Electrical Engineering has developed a next-generation neuromorphic semiconductor-based ultra-small computing chip that can learn and correct errors on its own.
< Figure 1. Scanning electron microscope (SEM) image of a computing chip equipped with a highly reliable selector-less 32×32 memristor crossbar array (left). Hardware system developed for real-time artificial intelligence implementation (right). >
What is special about this computing chip is that it can learn and correct errors that occur due to non-ideal characteristics that were difficult to solve in existing neuromorphic devices. For example, when processing a video stream, the chip learns to automatically separate a moving object from the background, and it becomes better at this task over time.
This self-learning ability has been proven by achieving accuracy comparable to ideal computer simulations in real-time image processing. The research team's main achievement is that it has completed a system that is both reliable and practical, beyond the development of brain-like components.
The research team has developed the world's first memristor-based integrated system that can adapt to immediate environmental changes, and has presented an innovative solution that overcomes the limitations of existing technology.
< Figure 2. Background and foreground separation results of an image containing non-ideal characteristics of memristor devices (left). Real-time image separation results through on-device learning using the memristor computing chip developed by our research team (right). >
At the heart of this innovation is a next-generation semiconductor device called a memristor*. The variable resistance characteristics of this device can replace the role of synapses in neural networks, and by utilizing it, data storage and computation can be performed simultaneously, just like our brain cells.
*Memristor: A compound word of memory and resistor, next-generation electrical device whose resistance value is determined by the amount and direction of charge that has flowed between the two terminals in the past.
The research team designed a highly reliable memristor that can precisely control resistance changes and developed an efficient system that excludes complex compensation processes through self-learning. This study is significant in that it experimentally verified the commercialization possibility of a next-generation neuromorphic semiconductor-based integrated system that supports real-time learning and inference.
This technology will revolutionize the way artificial intelligence is used in everyday devices, allowing AI tasks to be processed locally without relying on remote cloud servers, making them faster, more privacy-protected, and more energy-efficient.
“This system is like a smart workspace where everything is within arm’s reach instead of having to go back and forth between desks and file cabinets,” explained KAIST researchers Hakcheon Jeong and Seungjae Han, who led the development of this technology. “This is similar to the way our brain processes information, where everything is processed efficiently at once at one spot.”
The research was conducted with Hakcheon Jeong and Seungjae Han, the students of Integrated Master's and Doctoral Program at KAIST School of Electrical Engineering being the co-first authors, the results of which was published online in the international academic journal, Nature Electronics, on January 8, 2025.
*Paper title: Self-supervised video processing with self-calibration on an analogue computing platform based on a selector-less memristor array ( https://doi.org/10.1038/s41928-024-01318-6 )
This research was supported by the Next-Generation Intelligent Semiconductor Technology Development Project, Excellent New Researcher Project and PIM AI Semiconductor Core Technology Development Project of the National Research Foundation of Korea, and the Electronics and Telecommunications Research Institute Research and Development Support Project of the Institute of Information & communications Technology Planning & Evaluation.
2025.01.17 View 4518 -
KAIST Extends Lithium Metal Battery Lifespan by 750% Using Water
Lithium metal, a next-generation anode material, has been highlighted for overcoming the performance limitations of commercial batteries. However, issues inherent to lithium metal have caused shortened battery lifespans and increased fire risks. KAIST researchers have achieved a world-class breakthrough by extending the lifespan of lithium metal anodes by approximately 750% only using water.
KAIST (represented by President Kwang Hyung Lee) announced on the 2nd of December that Professor Il-Doo Kim from the Department of Materials Science and Engineering, in collaboration with Professor Jiyoung Lee from Ajou University, successfully stabilized lithium growth and significantly enhanced the lifespan of next-generation lithium metal batteries using eco-friendly hollow nanofibers as protective layers.
Conventional protective layer technologies, which involve applying a surface coating onto lithium metal in order to create an artificial interface with the electrolyte, have relied on toxic processes and expensive materials, with limited improvements in the lifespan of lithium metal anodes.
< Figure 1. Schematic illustration of the fabrication process of the newly developed protective membrane by eco-friendly electrospinning process using water >
To address these limitations, Professor Kim’s team proposed a hollow nanofiber protective layer capable of controlling lithium-ion growth through both physical and chemical means. This protective layer was manufactured through an environmentally friendly electrospinning process* using guar gum** extracted from plants as the primary material and utilizing water as the sole solvent.
*Electrospinning process: A method where polymer solutions are subjected to an electric field, producing continuous fibers with diameters ranging from tens of nanometers to several micrometers.
**Guar gum: A natural polymer extracted from guar beans, composed mainly of monosaccharides. Its oxidized functional groups regulate interactions with lithium ions.
< Figure 2. Physical and chemical control of Lithium dendrite by the newly developed protective membrane >
The nanofiber protective layer effectively controlled reversible chemical reactions between the electrolyte and lithium ions. The hollow spaces within the fibers suppressed the random accumulation of lithium ions on the metal surface, stabilizing the interface between the lithium metal surface and the electrolyte.
< Figure 3. Performance of Lithium metal battery full cells with the newly developed protective membrane >
As a result, the lithium metal anodes with this protective layer demonstrated approximately a 750% increase in lifespan compared to conventional lithium metal anodes. The battery retained 93.3% of its capacity even after 300 charge-discharge cycles, achieving world-class performance.
The researchers also verified that this natural protective layer decomposes entirely within about a month in soil, proving its eco-friendly nature throughout the manufacturing and disposal process.
< Figure 4. Excellent decomposition rate of the newly developed protective membrane >
Professor Il-Doo Kim explained, “By leveraging both physical and chemical protective functions, we were able to guide reversible reactions between lithium metal and the electrolyte more effectively and suppress dendrite growth, resulting in lithium metal anodes with unprecedented lifespan characteristics.”
He added, “As the environmental burden caused by battery production and disposal becomes a pressing issue due to surging battery demand, this water-based manufacturing method with biodegradable properties will significantly contribute to the commercialization of next-generation eco-friendly batteries.”
This study was led by Dr. Jiyoung Lee (now a professor in the Department of Chemical Engineering at Ajou University) and Dr. Hyunsub Song (currently at Samsung Electronics), both graduates of KAIST’s Department of Materials Science and Engineering. The findings were published as a front cover article in Advanced Materials, Volume 36, Issue 47, on November 21.
(Paper title: “Overcoming Chemical and Mechanical Instabilities in Lithium Metal Anodes with Sustainable and Eco-Friendly Artificial SEI Layer”)
The research was supported by the KAIST-LG Energy Solution Frontier Research Lab (FRL), the Alchemist Project funded by the Ministry of Trade, Industry and Energy, and the Top-Tier Research Support Program from the Ministry of Science and ICT.
2024.12.12 View 4659 -
A KAIST Team Develops Face-Conforming LED Mask Showing 340% Improved Efficacy in Deep Skin Elasticity
- A KAIST research team led by Professor Keon Jae Lee has developed a deep skin-stimulating LED mask which has been verified in clinical trials to improve dermis elasticity by 340%.
< Figure 1. Overall concept of face-fit surface-lighting micro-LEDs (FSLED) mask. a. Optical image of the FSLED mask showing uniform surface-lighting. schematic illustration of the FSLED mask. The 2D to 3D transformation procedure b. Difference in cosmetic effect on deep skin elasticity, wrinkles, and sagging between FSLED mask and CLED mask. (improvement percentage in eight weeks) >
Conventional LED masks, with their rigid design, fail to conform closely to the skin's contours. This limitation causes substantial light reflection, with up to 90% reflected over a distance of 2 cm, reducing light penetration and limiting stimulation of the deep skin layers essential for effective skin rejuvenation.
To address these challenges, Professor Lee's team developed a face-conforming surface lighting micro-LED (FSLED) mask, which can provide uniform photostimulation to the dermis. The key technology lies in the mask's ability to deliver uniform light to deep skin tissues while maintaining a conformal skin attachment. This is achieved through a 3D origami structure, integrated with 3,770 micro-LEDs and flexible surface light-diffusion layer, minimizing the gaps between the light source and the skin.
In clinical trials involving 33 participants, the FSLED mask demonstrated a 340% improvement in deep skin elasticity compared to conventional LED masks, proving its efficacy in significantly reducing skin wrinkles, sagging and aging.
Professor Keon Jae Lee said, “The FSLED mask provides cosmetic benefits to the entire facial dermis without the side effects of low-temperature burns, making home-care anti-aging treatment that enhances the quality of human life possible. The product is being manufactured by Fronics, KAIST startup company, and will be distributed globally through Amorepacific's network, with sales starting in November.”
This result titled “Clinical Validation of Face-fit Surface-lighting Micro Light-emitting Diode Mask for Skin Anti-aging Treatment”, in which Min Seo Kim, a student of the Master-Doctorate integrated program, and Jaehun An, a Ph.D. candidate, in the Department of Materials Science and Engineering of KAIST, took part as co-first authors, was published in Advanced Materials on October 22nd, 2024 (DOI: 10.1002/adma.202411651).
Introductory Video: Face-conforming surface LED mask for skin anti-aging ( https://www.youtube.com/watch?v=kSccLwx8N_w )
2024.10.29 View 4983 -
KAIST Develops a Fire-risk Free Self-Powered Hydrogen Production System
KAIST researchers have developed a new hydrogen production system that overcomes the current limitations of green hydrogen production. By using a water-splitting system with an aqueous electrolyte, this system is expected to block fire risks and enable stable hydrogen production.
KAIST (represented by President Kwang Hyung Lee) announced on the 22nd of October that a research team led by Professor Jeung Ku Kang from the Department of Materials Science and Engineering developed a self-powered hydrogen production system based on a high-performance zinc-air battery*.
*Zinc-air battery: A primary battery that absorbs oxygen from the air and uses it as an oxidant. Its advantage is long life, but its low electromotive force is a disadvantage.
Hydrogen (H₂) is a key raw material for synthesizing high-value-added substances, and it is gaining attention as a clean fuel with an energy density (142 MJ/kg) more than three times higher than traditional fossil fuels (gasoline, diesel, etc.). However, most current hydrogen production methods impose environmental burden as they emit carbon dioxide (CO₂).
While green hydrogen can be produced by splitting water using renewable energy sources such as solar cells and wind power, these sources are subject to irregular power generation due to weather and temperature fluctuations, leading to low water-splitting efficiency.
To overcome this, air batteries that can emit sufficient voltage (greater than 1.23V) for water splitting have been gaining attention. However, achieving sufficient capacity requires expensive precious metal catalysts and the performance of the catalyst materials becomes significantly degraded during prolonged charge and discharge cycles. Thus, it is essential to develop catalysts that are effective for the water-splitting reactions (oxygen and hydrogen evolution) and materials that can stabilize the repeated charge and discharge reactions (oxygen reduction and evolution) in zinc-air battery electrodes.
In response, Professor Kang's research team proposed a method to synthesize a non-precious metal catalyst material (G-SHELL) that is effective for three different catalytic reactions (oxygen evolution, hydrogen evolution, and oxygen reduction) by growing nano-sized, metal-organic frameworks on graphene oxide.
The team incorporated the developed catalyst material into the air cathode of a zinc-air battery, confirming that it achieved approximately five times higher energy density (797Wh/kg), high power characteristics (275.8mW/cm²), and long-term stability even under repeated charge and discharge conditions compared to conventional batteries.
Additionally, the zinc-air battery, which operates using an aqueous electrolyte, is safe from fire risks. It is expected that this system can be applied as a next-generation energy storage device when linked with water electrolysis systems, offering an environmentally friendly method for hydrogen production.
< Figure 1. Illustrations of a trifunctional graphene-sandwiched heterojunction-embedded layered lattice (G-SHELL) structure. Schematic representation of a) synthesis procedures of G-SHELL from a zeolitic imidazole framework, b) hollow core-layered shell structure with trifunctional sites for oxygen reduction evolution (ORR), oxygen evolution reaction (OER), and hydrogen evolution reaction (HER), and c) heterojunctions, eterojunction-induced internal electric fields, and the corresponding band structure. >
Professor Kang explained, "By developing a catalyst material with high activity and durability for three different electrochemical catalytic reactions at low temperatures using simple methods, the self-powered hydrogen production system we implemented based on zinc-air batteries presents a new breakthrough to overcome the current limitations of green hydrogen production."
<Figure 2. Electrochemical performance of a ZAB-driven water-splitting cell with G-SHELL. Diagram of a self-driven water-splitting cell integrated by combining a ZAB with an alkaline water electrolyzer.>
PhD candidate Dong Won Kim and Jihoon Kim, a master's student in the Department of Materials Science and Engineering at KAIST, were co-first authors of this research, which was published in the international journal Advanced Science on September 17th in the multidisciplinary field of materials science. (Paper Title: “Trifunctional Graphene-Sandwiched Heterojunction-Embedded Layered Lattice Electrocatalyst for High Performance in Zn-Air Battery-Driven Water Splitting”)
This research was supported by the Nano and Material Technology Development Program of the Ministry of Science and ICT and the National Research Foundation of Korea’s Future Technology Research Laboratory.
2024.10.22 View 3910 -
KAIST Develops Thread-like, Flexible Thermoelectric Materials Applicable in Extreme Environments
A team of Korean researchers developed a thermoelectric material that can be used in wearable devices, such as smart clothing, and while maintaining stable thermal energy performance even in extreme environments. It has dramatically resolved the dilemma of striking the balance between achieving good performance and the mechanical flexibility of thermoelectric materials, which has been a long-standing challenge in the field of thermoelectric materials, and has also proven the possibility of commercialization.
KAIST (President Kwang-Hyung Lee) announced on the 21st that a joint research team of Professor Yeon Sik Jung of the Department of Materials Science and Engineering and Professor Inkyu Park of the Department of Mechanical Engineering, in collaboration with the research teams of Professor Min-Wook Oh of Hanbat National University (President Yong Jun Oh) and Dr. Jun-Ho Jeong of the Korea Institute of Machinery and Materials (President Seoghyun Ryu), have successfully developed ‘bismuth telluride (Bi2Te3) thermoelectric fibers,’ an innovative energy harvesting solution for next-generation flexible electronic devices.
Thermoelectric materials are materials that generate voltage when there is a temperature difference and convert thermal energy into electrical energy. Currently, about 70% of energy being lost as wasted heat, so due attention is being given to research on these as sustainable energy materials that can recover and harvesting energy from this waste heat.
Most of the heat sources around us are curved, such as the human body, vehicle exhaust pipes, and cooling fins. Inorganic thermoelectric materials based on ceramic materials boast high thermoelectric performance, but they are fragile and difficult to produce in curved shapes. On the other hand, flexible thermoelectric materials using existing polymer binders can be applied to surfaces of various shapes, but their performance was limited due to the low electrical conductivity and high thermal resistance of the polymer.
Existing flexible thermoelectric materials contain polymer additives, but the inorganic thermoelectric material developed by the research team is not flexible, so they overcame these limitations by twisting nano ribbons instead of additives to produce a thread-shaped thermoelectric material. Inspired by the flexibility of inorganic nano ribbons, the research team used a nanomold-based electron beam deposition technique to continuously deposit nano ribbons and then twisted them into a thread shape to create bismuth telluride (Bi2Te3) inorganic thermoelectric fibers.
These inorganic thermoelectric fibers have higher bending strength than existing thermoelectric materials, and showed almost no change in electrical properties even after repeated bending and tensile tests of more than 1,000 times. The thermoelectric device created by the research team generates electricity using temperature differences, and if clothes are made with fiber-type thermoelectric devices, electricity can be generated from body temperature to operate other electronic devices.
< Figure 1. Schematic diagram and actual image of the all-inorganic flexible thermoelectric yarn made without polymer additives >
In fact, the possibility of commercialization was proven through a demonstration of collecting energy by embedding thermoelectric fibers in life jackets or clothing. In addition, it opened up the possibility of building a high-efficiency energy harvesting system that recycles waste heat by utilizing the temperature difference between the hot fluid inside a pipe and the cold air outside in industrial settings.
Professor Yeon Sik Jung said, "The inorganic flexible thermoelectric material developed in this study can be used in wearable devices such as smart clothing, and it can maintain stable performance even in extreme environments, so it has a high possibility of being commercialized through additional research in the future." Professor Inkyu Park also emphasized, "This technology will become the core of next-generation energy harvesting technology, and it is expected to play an important role in various fields from waste heat utilization in industrial sites to personal wearable self-power generation devices."
This study, in which Hanhwi Jang, a Ph.D. student at KAIST's Department of Materials Science and Engineering, Professor Junseong Ahn of Korea University, Sejong Campus, and Dr. Yongrok Jeong of Korea Atomic Energy Research Institute contributed equally as joint first authors, was published in the online edition of the international academic journal Advanced Materials on September 17, and was selected as the back-cover paper in recognition of its excellence. (Paper title: Flexible All-Inorganic Thermoelectric Yarns)
Meanwhile, this study was conducted through the Mid-career Researcher Support Program and the Future Materials Discovery Program of the National Research Foundation of Korea, and the support from the Global Bio-Integrated Materials Center, the Ministry of Trade, Industry and Energy, and the Korea Institute of Industrial Technology Evaluation and Planning (KEIT) upon the support by the Ministry of Science and ICT.
2024.10.21 View 3134 -
KAIST Develops Sodium Battery Capable of Rapid Charging in Just a Few Seconds
Sodium (Na), which is over 500 times more abundant than lithium (Li), has recently garnered significant attention for its potential in sodium-ion battery technologies. However, existing sodium-ion batteries face fundamental limitations, including lower power output, constrained storage properties, and longer charging times, necessitating the development of next-generation energy storage materials.
On the 11th of April, KAIST (represented by President Kwang Hyung Lee) announced that a research team led by Professor Jeung Ku Kang from the Department of Materials Science and Engineering had developed a high-energy, high-power hybrid sodium-ion battery capable of rapid charging.
The innovative hybrid energy storage system integrates anode materials typically used in batteries with cathodes suitable for supercapacitors. This combination allows the device to achieve both high storage capacities and rapid charge-discharge rates, positioning it as a viable next-generation alternative to lithium-ion batteries.
However, the development of a hybrid battery with high energy and high power density requires an improvement to the slow energy storage rate of battery-type anodes as well as the enhancement of the relatively low capacity of supercapacitor-type cathode materials.
< Figure 1. Schematic synthetic procedures of high-capacity/high-rate anode and cathode materials for a sodium-ion hybrid energy storages (SIHES) and their proposed energy storage mechanisms. Synthetic procedures for (a) ultrafine iron sulfide-embedded S-doped carbon/graphene (FS/C/G) anode and (b) zeolitic imidazolate framework-derived porous carbon (ZDPC) cathode materials. (c) Proposed energy storage mechanisms of Na+ ions in FS/C/G anode and ClO-4 ions in ZDPC cathode for an SIHES. >
To account for this, Professor Kang's team utilized two distinct metal-organic frameworks for the optimized synthesis of hybrid batteries. This approach led to the development of an anode material with improved kinetics through the inclusion of fine active materials in porous carbon derived from metal-organic frameworks. Additionally, a high-capacity cathode material was synthesized, and the combination of the cathode and anode materials allowed for the development of a sodium-ion storage system optimizing the balance and minimizing the disparities in energy storage rates between the electrodes.
The assembled full cell, comprising the newly developed anode and cathode, forms a high-performance hybrid sodium-ion energy storage device. This device surpasses the energy density of commercial lithium-ion batteries and exhibits the characteristics of supercapacitors' power density. It is expected to be suitable for rapid charging applications ranging from electric vehicles to smart electronic devices and aerospace technologies.
< Figure 2. Electrochemical characterizations of FS/C/G-20//ZDPC SIHES full cells (left). Ragone plots for FS/C/G-20//ZDPC (this work) and other previously reported sodium-ion electrochemical energy storage devices (right). >
Professor Kang noted that the hybrid sodium-ion energy storage device, capable of rapid charging and achieving an energy density of 247 Wh/kg and a power density of 34,748 W/kg, represents a breakthrough in overcoming the current limitations of energy storage systems. He anticipates broader applications across various electronic devices, including electric vehicles.
This research, co-authored by KAIST doctoral candidates Jong Hui Choi and Dong Won Kim, was published in the international journal Energy Storage Materials on March 29 with the title "Low-crystallinity conductive multivalence iron sulfide-embedded S-doped anode and high-surface-area O-doped cathode of 3D porous N-rich graphitic carbon frameworks for high-performance sodium-ion hybrid energy storages."
The study was conducted with support from the Ministry of Science and ICT and the National Research Foundation of Korea through the Nanomaterial Technology Development Project.
2024.04.18 View 16348 -
KAIST researchers developed a novel ultra-low power memory for neuromorphic computing
A team of Korean researchers is making headlines by developing a new memory device that can be used to replace existing memory or used in implementing neuromorphic computing for next-generation artificial intelligence hardware for its low processing costs and its ultra-low power consumption.
KAIST (President Kwang-Hyung Lee) announced on April 4th that Professor Shinhyun Choi's research team in the School of Electrical Engineering has developed a next-generation phase change memory* device featuring ultra-low-power consumption that can replace DRAM and NAND flash memory.
☞ Phase change memory: A memory device that stores and/or processes information by changing the crystalline states of materials to be amorphous or crystalline using heat, thereby changing its resistance state.
Existing phase change memory has the problems such as expensive fabrication process for making highly scaled device and requiring substantial amount of power for operation. To solve these problems, Professor Choi’s research team developed an ultra-low power phase change memory device by electrically forming a very small nanometer (nm) scale phase changeable filament without expensive fabrication processes. This new development has the groundbreaking advantage of not only having a very low processing cost but also of enabling operating with ultra-low power consumption.
DRAM, one of the most popularly used memory, is very fast, but has volatile characteristics in which data disappears when the power is turned off. NAND flash memory, a storage device, has relatively slow read/write speeds, but it has non-volatile characteristic that enables it to preserve the data even when the power is cut off.
Phase change memory, on the other hand, combines the advantages of both DRAM and NAND flash memory, offering high speed and non-volatile characteristics. For this reason, phase change memory is being highlighted as the next-generation memory that can replace existing memory, and is being actively researched as a memory technology or neuromorphic computing technology that mimics the human brain.
However, conventional phase change memory devices require a substantial amount of power to operate, making it difficult to make practical large-capacity memory products or realize a neuromorphic computing system. In order to maximize the thermal efficiency for memory device operation, previous research efforts focused on reducing the power consumption by shrinking the physical size of the device through the use of the state-of-the-art lithography technologies, but they were met with limitations in terms of practicality as the degree of improvement in power consumption was minimal whereas the cost and the difficulty of fabrication increased with each improvement.
In order to solve the power consumption problem of phase change memory, Professor Shinhyun Choi’s research team created a method to electrically form phase change materials in extremely small area, successfully implementing an ultra-low-power phase change memory device that consumes 15 times less power than a conventional phase change memory device fabricated with the expensive lithography tool.
< Figure 1. Illustrations of the ultra-low power phase change memory device developed through this study and the comparison of power consumption by the newly developed phase change memory device compared to conventional phase change memory devices. >
Professor Shinhyun Choi expressed strong confidence in how this research will span out in the future in the new field of research saying, "The phase change memory device we have developed is significant as it offers a novel approach to solve the lingering problems in producing a memory device at a greatly improved manufacturing cost and energy efficiency. We expect the results of our study to become the foundation of future electronic engineering, enabling various applications including high-density three-dimensional vertical memory and neuromorphic computing systems as it opened up the possibilities to choose from a variety of materials.” He went on to add, “I would like to thank the National Research Foundation of Korea and the National NanoFab Center for supporting this research.”
This study, in which See-On Park, a student of MS-PhD Integrated Program, and Seokman Hong, a doctoral student of the School of Electrical Engineering at KAIST, participated as first authors, was published on April 4 in the April issue of the renowned international academic journal Nature. (Paper title: Phase-Change Memory via a Phase-Changeable Self-Confined Nano-Filament)
This research was conducted with support from the Next-Generation Intelligent Semiconductor Technology Development Project, PIM AI Semiconductor Core Technology Development (Device) Project, Excellent Emerging Research Program of the National Research Foundation of Korea, and the Semiconductor Process-based Nanomedical Devices Development Project of the National NanoFab Center.
2024.04.04 View 6844 -
The World’s First Hacking-preventing Cryptographic Semiconductor Chip
With the dramatic increase in the amount of information exchanged between components or devices in the 5G/6G era, such as for the Internet of Things (IoT) and autonomous driving, hacking attacks are becoming more sophisticated. Consequently, enhancing security functions is essential for safely transmitting data between and among devices.
On February 29th, a KAIST research team led by Professors Yang-gyu Choi and Seung-tak Ryu from the School of Electrical Engineering announced the successful development of the world's first security cryptographic semiconductor.
The team has developed the Cryptoristor, a cryptographic transistor based on FinFET technology, produced through a 100% silicon-compatible process, for the first time in the world. Cryptoristor is a random number generator (RNG) with unparalleled characteristics, featuring a unique structure comprising a single transistor and a distinctive mechanism.
In all security environments, including artificial intelligence, the most crucial element is the RNG. In the most commonly used security chip, the Advanced Encryption Standard (AES), the RNG is a core component, occupying approximately 75% of the total chip area and more than 85% of its energy consumption. Hence, there is an urgent need for the development of low-power/ultra-small RNGs suitable for mobile or IoT devices.
Existing RNGs come with limitations as they lack compatibility with silicon CMOS processes and circuit-based RNGs occupy a large surface area.
In contrast, the team’s newly developed Cryptoristor, a cryptographic semiconductor based on a single-component structure, consumes and occupies less than .001 of the power and area compared to the current chips being used. Utilizing the inherent randomness of FinFETs, fabricated on a Silicon-on-Insulator (SOI) substrate with an insulating layer formed beneath the silicon, the team developed an RNG that unpredictably produces zeroes and ones.
< Figure 1. Conceptual diagram of the security cryptographic transistor device. >
Generally speaking, preventing hackers from predicting the encrypted algorithms during data exchanges through mobile devices is pivotal. Therefore, this method ensures unpredictability by generating random sequences of zeroes and ones that change every time.
Moreover, while the Cryptoristor-based RNG research is the world's first of its kind without any international implementation cases, it shares the same transistor structure as existing logic or memory components. This enables 100% production through rapid mass production processes using existing semiconductor facilities at a low cost.
Seung-il Kim, a PhD student who led the research, explained the significance of the study, stating, "As a cryptographic semiconductor, the ultra-small/low-power random number generator enhances security through its distinctive unpredictability, supporting safe hyperconnectivity with secure transmissions between chips or devices. Particularly, compared to previous research, it offers excellent advantages in terms of energy consumption, integration density, and cost, making it suitable for IoT device environments."
This research, with master’s student Hyung-jin Yoo as the co-author, was officially published in the online edition of Science Advances, a sister journal of Science, in February 2024 (research paper title: Cryptographic transistor for true random number generator with low power consumption).
This research received support from the Next-Generation Intelligent Semiconductor Technology Development Project and the Core Technology Development Project for the National Semiconductor Research Laboratory.
2024.03.07 View 6836 -
KAIST and Hyundai Motors Collaborate to Develop Ultra-Fast Hydrogen Leak Detection within 0.6 Seconds
Recently, as the spread of eco-friendly hydrogen cars increases, the importance of hydrogen sensors is also on the rise. In particular, achieving technology to detect hydrogen leaks within one second remains a challenging task. Accordingly, the development of the world's first hydrogen sensor that meets the performance standards of the U.S. Department of Energy has become a hot topic.
A team at KAIST led by Dr. Min-Seung Jo from Professor Jun-Bo Yoon's team in the Department of Electrical and Electronic Engineering has successfully achieved all of its desired performance indicators, meeting globally recognized standards through collaboration with the Electromagnetic Energy Materials Research Team at Hyundai Motor Company's Basic Materials Research Center and Professor Min-Ho Seo of Pusan National University. On January 10th, the research group announced that the world's first hydrogen sensor with a speed of less than 0.6 seconds had been developed.
In order to secure faster and more stable hydrogen detection technology than existing commercialized hydrogen sensors, the KAIST team began developing a next-generation hydrogen sensor in 2021 together with Hyundai Motor Company, and succeeded after two years of development.
< Figure 1. (Left) The conceptual drawing of the structure of the coplanar heater-integrated hydrogen sensor. Pd nanowire is stably suspended in the air even with its thickness of 20 nm. (Right) A graph of hydrogen sensor performance operating within 0.6 seconds for hydrogen at a concentration of 0.1 to 4% >
Existing hydrogen sensor research has mainly focused on sensing materials, such as catalytic treatments or the alloying of palladium (Pd) materials, which are widely used in hydrogen sensors. Although these studies showed excellent performance with certain performance indicators, they did not meet all of the desired performance indicators and commercialization was limited due to the difficulty of batch processing.
To overcome this, the research team developed a sensor that satisfied all of the performance indicators by combining independent micro/nano structure design and process technology based on pure palladium materials. In addition, considering future mass production, pure metal materials with fewer material restrictions were used rather than synthetic materials, and a next-generation hydrogen sensor was developed that can be mass-produced based on a semiconductor batch process.
The developed device is a differential coplanar device in which the heater and sensing materials are integrated side by side on the same plane to overcome the uneven temperature distribution of existing gas sensors, which have a structure where the heater, insulating layer, and sensing materials are stacked vertically. The palladium nanomaterial, which is a sensing material, has a completely floating structure and is exposed to air from beneath, maximizing the reaction area with a gas to ensure a fast reaction speed. In addition, the palladium sensing material operates at a uniform temperature throughout the entire area, and the research team was able to secure a fast operation speed, wide sensing concentration, and temperature/humidity insensitivity by accurately controlling temperature-sensitive sensing performance.
< Figure 2. Electron microscopy of the coplanar heater-integrated hydrogen sensor (left) Photo of the entire device (top right) Pd nanowire suspended in the air (bottom right) Cross section of Pd nanowire >
The research team packaged the fabricated device with a Bluetooth module to create an integrated module that wirelessly detects hydrogen leaks within one second and then verified its performance. Unlike existing high-performance optical hydrogen sensors, this one is highly portable and can be used in a variety of applications where hydrogen energy is used.
Dr. Min-Seung Jo, who led the research, said, “The results of this research are of significant value as they not only operate at high speeds by exceeding the performance limits of existing hydrogen sensors, but also secure the reliability and stability necessary for actual use, and can be used in various places such as automobiles, hydrogen charging stations, and homes.” He also revealed his future plans, saying, “Through the commercialization of this hydrogen sensor technology, I would like to contribute to advancing the safe and eco-friendly use of hydrogen energy.”
< Figure 3. (Left) Real-time hydrogen detection results from the coplanar heater-integrated hydrogen sensor integrated and packaged in wireless communication and an app for mobile phone. (Middle) LED blinking cycle control in accordance with the hydrogen concentration level. (Right) Results of performance confirmation of the detection within 1 second in a real-time hydrogen leak demo >
The research team is currently working with Hyundai Motor Company to manufacture the device on a wafer scale and then mount it on a vehicle module to further verify detection and durability performance.
This research, conducted by Dr. Min-Seung Jo as the first author, has three patent applications filed in the U.S. and Korea, and was published in the renowned international academic journal 'ACS Nano'. (Paper title: Ultrafast (∼0.6 s), Robust, and Highly Linear Hydrogen Detection up to 10% Using Fully Suspended Pure Pd Nanowire). (Impact Factor: 18.087). ( https://pubs.acs.org/doi/10.1021/acsnano.3c06806?fig=fig1&ref=pdf )
The research was conducted through support from the National Research Foundation of Korea's Nano and Materials Technology Development Project and support and joint development efforts from Hyundai Motor Company's Basic Materials Research Center.
2024.01.25 View 5421 -
A KAIST Team Develops Selective Transfer Printing Technology for MicroLEDs
- A KAIST research team led by Professor Keon Jae Lee demonstrates the transfer printing of a large number of micro-sized inorganic semiconductor chips via the selective modulation of micro-vacuum force.
MicroLEDs are a light source for next-generation displays that utilize inorganic LED chips with a size of less than 100 μm. MicroLEDs have attracted a great deal of attention due to their superior electrical/optical properties, reliability, and stability compared to conventional displays such as LCD, OLED, and QD. To commercialize microLEDs, transfer printing technology is essential for rearranging microLED dies from a growth substrate onto the final substrate with a desired layout and precise alignment. However, previous transfer methods still have many challenges such as the need for additional adhesives, misalignment, low transfer yield, and chip damage.
Professor Lee’s research team has developed a micro-vacuum assisted selective transfer printing (µVAST) technology to transfer a large number of microLED chips by adjusting the micro-vacuum suction force.
The key technology relies on a laser-induced etching (LIE) method for forming 20 μm-sized micro-hole arrays with a high aspect ratio on glass substrates at fabrication speed of up to 7,000 holes per second. The LIE-drilled glass is connected to the vacuum channels, controlling the micro-vacuum force at desired hole arrays to selectively pick up and release the microLEDs. The micro-vacuum assisted transfer printing accomplishes a higher adhesion switchability compared to previous transfer methods, enabling the assembly of micro-sized semiconductors with various heterogeneous materials, sizes, shapes, and thicknesses onto arbitrary substrates with high transfer yields.
< Figure 01. Concept of micro-vacuum assisted selective transfer printing (μVAST). >
Professor Keon Jae Lee said, “The micro-vacuum assisted transfer provides an interesting tool for large-scale, selective integration of microscale high-performance inorganic semiconductors. Currently, we are investigating the transfer printing of commercial microLED chips with an ejector system for commercializing next-generation displays (Large screen TVs, flexible/stretchable devices) and wearable phototherapy patches.”
This result titled “Universal selective transfer printing via micro-vacuum force” was published in Nature Communications on November 26th, 2023. (DOI: 10.1038/S41467-023-43342-8)
< Figure 02. Universal transfer printing of thin-film semiconductors via μVAST. >
< Figure 03. Flexible devices fabricated by μVAST. >
Title: Entire process including LIE and µVAST
Vimeo link: https://vimeo.com/894430416?share=copy
2023.12.19 View 3921 -
A KAIST Research Team Develops a Smart Color-Changing Flexible Battery with Ultra-high Efficiency
With the rapid growth of the smart and wearable electronic devices market, smart next-generation energy storage systems that have energy storage functions as well as additional color-changing properties are receiving a great deal of attention. However, existing electrochromic devices have low electrical conductivity, leading to low efficiency in electron and ion mobility, and low storage capacities. Such batteries have therefore been limited to use in flexible and wearable devices.
On August 21, a joint research team led by Professor Il-Doo Kim from the KAIST Department of Materials Science and Engineering (DMSE) and Professor Tae Gwang Yun from the Myongji University Department of Materials Science and Engineering announced the development of a smart electrochromic Zn-ion battery that can visually represent its charging and discharging processes using an electrochromic polymer anode incorporated with a “π-bridge spacer”, which increases electron and ion mobility efficiency.
Batteries topped with electrochromic properties are groundbreaking inventions that can visually represent their charged and discharged states using colors, and can be used as display devices that cut down energy consumption for indoor cooling by controlling solar absorbance. The research team successfully built a flexible and electrochromic smart Zn-ion battery that can maintain its excellent electrochromic and electrochemical properties, even under long-term exposure to the atmosphere and mechanical deformations.
< Figure 1. Electrochromic zinc ion battery whose anode is made of a polymer that turns dark blue when charged and transparent when discharged. >
To maximize the efficiency of electron and ion mobility, the team modelled and synthesized the first π-bridge spacer-incorporated polymer anode in the world. π-bonds can improve the mobility of electrons within a structure to speed up ion movement and maximize ion adsorption efficiency, which improves its energy storage capacity.
In anode-based batteries with a π-bridge spacer, the spacer provides room for quicker ion movement. This allows fast charging, an improved zinc-ion discharging capacity of 110 mAh/g, which is 40% greater than previously reported, and a 30% increase in electrochromic function that switches from dark blue to transparent when the device is charged/discharged. In addition, should the transparent flexible battery technology be applied to smart windows, they would display darker colors during the day while they absorb solar energy, and function as a futuristic energy storage technique that can block out UV radiation and replace curtains.
< Figure 2. A schematic diagram of the structure of the electrochromic polymer with π-π spacer and the operation of a smart flexible battery using this cathode material. >
< Figure 3. (A) Density Functional Theory (DFT) theory-based atomic and electronic structure analysis. (B) Comparison of rate characteristics for polymers with and without π-bridge spacers. (C) Electrochemical performance comparison graph with previously reported zinc ion batteries. The anode material, which has an electron donor-acceptor structure with a built-in π-bridge spacer, shows better electrochemical performance and electrochromic properties than existing zinc ion batteries and electrochromic devices. >
Professor Il-Doo Kim said, “We have developed a polymer incorporated with a π-bridge spacer and successfully built a smart Zn-ion battery with excellent electrochromic efficiency and high energy storage capacity.” He added, “This technique goes beyond the existing concept of batteries that are used simply as energy storage devices, and we expect this technology to be used as a futuristic energy storage system that accelerates innovation in smart batteries and wearable technologies.”
This research, co-first authored by the alums of KAIST Departments of Material Sciences of Engineering, Professor Tae Gwang Yun of Myongji University, Dr. Jiyoung Lee, a post-doctoral associate at Northwestern University, and Professor Han Seul Kim at Chungbuk National University, was published as an inside cover article for Advanced Materials on August 3 under the title, “A π-Bridge Spacer Embedded Electron Donor-Acceptor Polymer for Flexible Electrochromic Zn-Ion Batteries”.
< Figure 4. Advanced Materials Inside Cover (August Issue) >
This research was supported by the Nanomaterial Technology Development Project under the Korean Ministry of Science and ICT, the Nano and Material Technology Development Project under the National Research Foundation of Korea, the Successive Academic Generation Development Project under the Korean Ministry of Education, and the Alchemist Project under the Korean Ministry of Trade, Industry & Energy.
2023.09.01 View 7268