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KAIST Automates the Search for “Dream Semiconductor” 2D Semiconductors The era of researchers manually searching for two-dimensional semiconductors, which are drawing attention as next-generation AI semiconductors, is coming to an end. KAIST researchers have automated semiconductor screening and device fabrication, analyzed thousands of devices, and revealed the relationship between thickness and performance that had long been difficult to identify. This achievement is expected to shift next-generation semiconductor research toward a data-driven approach and accelerate the commercialization of AI semiconductors and ultra-low-power semiconductors. KAIST (President Choongsik Bae) announced on the 9th that a research team led by Professor Jimin Kwon of the School of Electrical Engineering and the Department of AI System has developed a technology that automatically identifies two-dimensional semiconductors from optical microscope images alone and connects the process to transistor fabrication, through joint research with UNIST, Hanbat National University, Hanyang University, and Washington University in St. Louis in the United States. Two-dimensional semiconductors are ultrathin semiconductors only a few atomic layers thick. They are called “dream semiconductors” because they can enable smaller semiconductors that consume less electricity than conventional silicon semiconductors. Today’s silicon semiconductors are approaching physical limits, as continued miniaturization of circuits leads to greater power loss and heat generation. Two-dimensional semiconductors, which are attracting attention as next-generation materials to overcome these limits, are expected to be used in a wide range of future technologies, including AI semiconductors, smartphones, data centers, wearable devices, foldable or stretchable electronics, and ultra-small medical sensors. However, in two-dimensional semiconductors made through solution processing, the position, size, and thickness of each small semiconductor flake all differ, requiring researchers to find the desired samples one by one under a microscope. They then had to manually design electrodes according to the identified positions, requiring substantial time and effort, and making it practically difficult to analyze thousands or more devices at once. The research team used molybdenum disulfide (MoS₂), a representative two-dimensional semiconductor material. By using the fact that the RGB red, green, and blue brightness values seen under a microscope change depending on thickness, the team enabled a computer to automatically identify the desired semiconductor and automatically design the electrodes. Verification using atomic force microscopy (AFM) confirmed that even subtle thickness differences of three to eight layers could be accurately distinguished. Through this approach, the team successfully selected suitable samples automatically from more than 120,000 semiconductor flakes and fabricated and analyzed 1,615 transistors. The large-scale analysis also produced meaningful results. The team statistically clarified for the first time that as the semiconductor becomes thicker, current flows more easily, but the ability to switch electricity on and off actually decreases. This characteristic had been difficult to confirm previously because only a small number of samples could be analyzed, but the team revealed it through large-scale data. The greatest significance of this study is that it did not simply automate the fabrication process, but transformed two-dimensional semiconductor research, which had relied on human experience, into data-driven research. Going forward, the technology is expected to enable researchers to fabricate and analyze more semiconductors more quickly, identify high-performance materials, and ultimately expand into research in which AI designs new semiconductors. This study was conducted with Professor Jimin Kwon, Dr. Haksoon Jung, and Dr. Yongwoo Lee of KAIST as co-corresponding authors, and Sanghyun Lee of UNIST as the first author. The research results were published on April 3 in Advanced Functional Materials, a leading international journal in materials science, and were also selected as an Inside Back Cover article in the field of 2D Materials & Electronics. ※ Paper title: Statistically Resolving Thickness-Dependent Electrical Characteristics in Multilayer-MoS₂ Transistors, DOI: 10.1002/adfm.202532204 ※ Author information: Professor Jimin Kwon (KAIST, corresponding author), Dr. Haksoon Jung (KAIST, corresponding author), Dr. Yongwoo Lee (KAIST, corresponding author), Sanghyun Lee (UNIST, first author), and participating researchers from partner institutions: Sumin Hong (UNIST), Minho Park (UNIST), Professor Seongju Kim (Hanbat National University), Professor Sang-Hoon Baek (Hanyang University), Professor Joonki Suh (KAIST), Seonguk Yang (KAIST), Professor Sang-Hoon Bae (Washington University in St. Louis), and Dr. Chang-Soo Lee (TDS) This research was supported by the Individual Basic Research Program of the National Research Foundation of Korea (NRF), funded by the Ministry of Science and ICT (MSIT), and by the Advanced Strategic Industry Super-Gap Technology Development Program of the Korea Planning & Evaluation Institute of Industrial Technology (KEIT), funded by the Ministry of Trade, Industry and Energy (MOTIE).
2026.07.09 View 1161