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KAIST detects ‘hidden defects’ that degrade semiconductor performance with 1,000× higher sensitivity <(From Left) Professor Byungha Shin, Ph.D candidate Chaeyoun Kim, Dr. Oki Gunawan> Semiconductors are used in devices such as memory chips and solar cells, and within them may exist invisible defects that interfere with electrical flow. A joint research team has developed a new analysis method that can detect these “hidden defects” (electronic traps) with approximately 1,000 times higher sensitivity than existing techniques. The technology is expected to improve semiconductor performance and lifetime, while significantly reducing development time and costs by enabling precise identification of defect sources. KAIST (President Kwang Hyung Lee) announced on January 8th that a joint research team led by Professor Byungha Shin of the Department of Materials Science and Engineering at KAIST and Dr. Oki Gunawan of the IBM T. J. Watson Research Center has developed a new measurement technique that can simultaneously analyze defects that hinder electrical transport (electronic traps) and charge carrier transport properties inside semiconductors. Within semiconductors, electronic traps can exist that capture electrons and hinder their movement. When electrons are trapped, electrical current cannot flow smoothly, leading to leakage currents and degraded device performance. Therefore, accurately evaluating semiconductor performance requires determining how many electronic traps are present and how strongly they capture electrons. The research team focused on Hall measurements, a technique that has long been used in semiconductor analysis. Hall measurements analyze electron motion using electric and magnetic fields. By adding controlled light illumination and temperature variation to this method, the team succeeded in extracting information that was difficult to obtain using conventional approaches. Under weak illumination, newly generated electrons are first captured by electronic traps. As the light intensity is gradually increased, the traps become filled, and subsequently generated electrons begin to move freely. By analyzing this transition process, the researchers were able to precisely calculate the density and characteristics of electronic traps. The greatest advantage of this method is that multiple types of information can be obtained simultaneously from a single measurement. It allows not only the evaluation of how fast electrons move, how long they survive, and how far they travel, but also the properties of traps that interfere with electron transport. The team first validated the accuracy of the technique using silicon semiconductors and then applied it to perovskites, which are attracting attention as next-generation solar cell materials. As a result, they successfully detected extremely small quantities of electronic traps that were difficult to identify using existing methods—demonstrating a sensitivity approximately 1,000 times higher than that of conventional techniques. < Conceptual Diagram of the Evolution of Hall Characterization (Analysis) Techniques > Professor Byungha Shin stated, “This study presents a new method that enables simultaneous analysis of electrical transport and the factors that hinder it within semiconductors using a single measurement,” adding that “it will serve as an important tool for improving the performance and reliability of various semiconductor devices, including memory semiconductors and solar cells.” The results of this research were published on January 1 in Science Advances, an international academic journal, with Chaeyoun Kim, a doctoral student in the Department of Materials Science and Engineering, as the first author. ※ Paper title: “Electronic trap detection with carrier-resolved photo-Hall effect,” DOI: https://doi.org/10.1126/sciadv.adz0460 This research was supported by the Ministry of Science and ICT and the National Research Foundation of Korea. < Conceptual Diagram of Charge Transport and Trap Characterization Using Photo-Hall Measurements (AI-generated image) >
2026.01.08 View 3599