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KAIST develops world’s most sensitive light-powered photodetector—20 times more sensitive, operating without electricity​
View : 3335 Date : 2025-08-16 Writer : PR Office

<(From left) Ph.D candidate Jaeha Hwang, Ph.D candidate Jungi Song ,Professor Kayoung Lee from Electrical Engineering>

Silicon semiconductors used in existing photodetectors have low light responsivity, and the two-dimensional semiconductor MoS₂ (molybdenum disulfide) is so thin that doping processes to control its electrical properties are difficult, limiting the realization of high-performance photodetectors. The KAIST research team has overcome this technical limitation and developed the world’s highest-performing self-powered photodetector, which operates without electricity in environments with a light source. This paves the way for an era where precise sensing is possible without batteries in wearable devices, biosignal monitoring, IoT devices, autonomous vehicles, and robots, as long as a light source is present.

KAIST (President Kwang Hyung Lee) announced on the 14th of August that Professor Kayoung Lee’s research team from the School of Electrical Engineering has developed a self-powered photodetector that operates without external power supply. This sensor demonstrated a sensitivity up to 20 times higher than existing products, marking the highest performance level among comparable technologies reported to date.

Professor Kayoung Lee’s team fabricated a “PN junction structure” photodetector capable of generating electrical signals on its own in environments with light, even without an electrical energy supply, by introducing a “van der Waals bottom electrode” that makes semiconductors extremely sensitive to electrical signals without doping.

First, a “PN junction” is a structure formed by joining p-type (hole-rich) and n-type (electron-rich) materials in a semiconductor. This structure causes current to flow in one direction when exposed to light, making it a key component in photodetectors and solar cells.

Normally, to create a proper PN junction, a process called “doping” is required, which involves deliberately introducing impurities into the semiconductor to alter its electrical properties. However, two-dimensional semiconductors such as MoS₂ are only a few atoms thick, so doping in the conventional way can damage the structure or reduce performance, making it difficult to create an ideal PN junction.

To overcome these limitations and maximize device performance, the research team designed a new device structure incorporating two key technologies: the “van der Waals electrode” and the “partial gate.”

The “partial gate” structure applies an electrical signal only to part of the two-dimensional semiconductor, controlling one side to behave like p-type and the other like n-type. This allows the device to function electrically like a PN junction without doping.

Furthermore, considering that conventional metal electrodes can chemically bond strongly to the semiconductor and damage its lattice structure, the “van der Waals bottom electrode” was attached gently using van der Waals forces. This preserved the original structure of the two-dimensional semiconductor while ensuring effective electrical signal transfer.

This innovative approach secured both structural stability and electrical performance, enabling the realization of a PN junction in thin two-dimensional semiconductors without damaging their structure.

Thanks to this innovation, the team succeeded in implementing a high-performance PN junction without doping. The device can generate electrical signals with extreme sensitivity as long as there is light, even without an external power source. Its light detection sensitivity (responsivity) exceeds 21 A/W, more than 20 times higher than powered conventional sensors, 10 times higher than silicon-based self-powered sensors, and over twice as high as existing MoS₂ sensors. This level of sensitivity means it can be applied immediately to high-precision sensors capable of detecting biosignals or operating in dark environments.

Professor Kayoung Lee stated that they “have achieved a level of sensitivity unimaginable in silicon sensors, and although two-dimensional semiconductors are too thin for conventional doping processes, [they] succeeded in implementing a PN junction that controls electrical flow without doping.” She added, “This technology can be used not only in sensors but also in key components that control electricity inside smartphones and electronic devices, providing a foundation for miniaturization and self-powered operation of next-generation electronics.”

Jaeha Hwang, Jungi Song, Experimnet in Porgress>


This research, with doctoral students Jaeha Hwang and Jungi Song as co-first authors, was published online on July 26 in Advanced Functional Materials (IF 19), a leading journal in materials science.
 ※ Paper title: Gated PN Junction in Ambipolar MoS₂ for Superior Self-Powered Photodetection
 ※ DOI: https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.202510113

Meanwhile, this work was supported by the National Research Foundation of Korea, the Korea Basic Science Institute, Samsung Electronics, and the Korea Institute for Advancement of Technology.

 

 

 

Electrical Engineering sensitive light-powered photodetector Kayoung Lee the School of Electrical Engineering the School of Electrical Engineering
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