Receive KAIST news by email!
Type your e-mail address here.
by recently order
by view order
A Theoretical Boost to Nano-Scale Devices
- Researchers calculate the quasi-Fermi levels in molecular junctions applying an initio approach. - Semiconductor companies are struggling to develop devices that are mere nanometers in size, and much of the challenge lies in being able to more accurately describe the underlying physics at that nano-scale. But a new computational approach that has been in the works for a decade could break down these barriers. Devices using semiconductors, from computers to solar cells, have enjoyed tremendous efficiency improvements in the last few decades. Famously, one of the co-founders of Intel, Gordon Moore, observed that the number of transistors in an integrated circuit doubles about every two years—and this ‘Moore’s law’ held true for some time. In recent years, however, such gains have slowed as firms that attempt to engineer nano-scale transistors hit the limits of miniaturization at the atomic level. Researchers with the School of Electrical Engineering at KAIST have developed a new approach to the underlying physics of semiconductors. “With open quantum systems as the main research target of our lab, we were revisiting concepts that had been taken for granted and even appear in standard semiconductor physics textbooks such as the voltage drop in operating semiconductor devices,” said the lead researcher Professor Yong-Hoon Kim. “Questioning how all these concepts could be understood and possibly revised at the nano-scale, it was clear that there was something incomplete about our current understanding.” “And as the semiconductor chips are being scaled down to the atomic level, coming up with a better theory to describe semiconductor devices has become an urgent task.” The current understanding states that semiconductors are materials that act like half-way houses between conductors, like copper or steel, and insulators, like rubber or Styrofoam. They sometimes conduct electricity, but not always. This makes them a great material for intentionally controlling the flow of current, which in turn is useful for constructing the simple on/off switches—transistors—that are the foundation of memory and logic devices in computers. In order to ‘switch on’ a semiconductor, a current or light source is applied, exciting an electron in an atom to jump from what is called a ‘valence band,’ which is filled with electrons, up to the ‘conduction band,’ which is originally unfilled or only partially filled with electrons. Electrons that have jumped up to the conduction band thanks to external stimuli and the remaining ‘holes’ are now able to move about and act as charge carriers to flow electric current. The physical concept that describes the populations of the electrons in the conduction band and the holes in the valence band and the energy required to make this jump is formulated in terms of the so-called ‘Fermi level.’ For example, you need to know the Fermi levels of the electrons and holes in order to know what amount of energy you are going to get out of a solar cell, including losses. But the Fermi level concept is only straightforwardly defined so long as a semiconductor device is at equilibrium—sitting on a shelf doing nothing—and the whole point of semiconductor devices is not to leave them on the shelf. Some 70 years ago, William Shockley, the Nobel Prize-winning co-inventor of the transistor at the Bell Labs, came up with a bit of a theoretical fudge, the ‘quasi-Fermi level,’ or QFL, enabling rough prediction and measurement of the interaction between valence band holes and conduction band electrons, and this has worked pretty well until now. “But when you are working at the scale of just a few nanometers, the methods to theoretically calculate or experimentally measure the splitting of QFLs were just not available,” said Professor Kim. This means that at this scale, issues such as errors relating to voltage drop take on much greater significance. Kim’s team worked for nearly ten years on developing a novel theoretical description of nano-scale quantum electron transport that can replace the standard method—and the software that allows them to put it to use. This involved the further development of a bit of math known as the Density Functional Theory that simplifies the equations describing the interactions of electrons, and which has been very useful in other fields such as high-throughput computational materials discovery. For the first time, they were able to calculate the QFL splitting, offering a new understanding of the relationship between voltage drop and quantum electron transport in atomic scale devices. In addition to looking into various interesting non-equilibrium quantum phenomena with their novel methodology, the team is now further developing their software into a computer-aided design tool to be used by semiconductor companies for developing and fabricating advanced semiconductor devices. The study, featured at the Proceedings of the National Academy of Sciences of the USA on May 12, was supported by the National Research Foundation and the Korea Institute of Science and Technology Information Supercomputing Center. Image caption: The newly developed formalism and QFL splitting analysis led to new ways of characterizing extremely scaled-down semiconductor devices and the technology computer-aided design (TCAD) of next- generation nano-electronic/energy/bio devices. Image credit: Yong-Hoon Kim, KAIST Image usage restrictions: News organizations may use or redistribute this image, with proper attribution, as part of news coverage of this paper only. Publication: Juho Lee, Hyeonwoo Yeo, and Yong-Hoon Kim. (2020) ‘Quasi-Fermi level splitting in nanoscale junctions from ab initio.’ Proceedings of the National Academy of Sciences of the United States of America (PNAS), Volume 117, Issue 19, pp.10142-101488. Available online at https://doi.org/10.1073/pnas.1921273117 Profile: Yong-Hoon Kim Professor email@example.com http://nanocore.kaist.ac.kr/ 1st-Principles Nano-Device Computing Lab School of Electrical Engineering KAIST (END)
Novel Material Properties of Hybrid Perovskite Nanostructures for Next-generation Non-linear Electronic Devices
(from left: Juho Lee, Dr. Muhammad Ejaz Khan and Professor Yong-Hoon Kim) A KAIST research team reported a novel non-linear device with the founding property coming from perovskite nanowires. They showed that hybrid perovskite-derived, inorganic-framework nanowires can acquire semi-metallicity, and proposed negative differential resistance (NDR) devices with excellent NDR characteristics that resulted from a novel quantum-hybridization NDR mechanism, implying the potential of perovskite nanowires to be realized in next-generation electronic devices. Organic-inorganic hybrid halide perovskites have recently emerged as prominent candidates for photonic applications due to their excellent optoelectronic properties as well as their low cost and facile synthesis processes. Prominent progresses have been already made for devices including solar cells, light-emitting diodes, lasers and photodetectors. However, research on electronic devices based on hybrid halide perovskites has not been actively pursued compared with their photonic device counterparts. Professor Yong-Hoon Kim from the School of Electrical Engineering and his team took a closer look at low-dimensional organic-inorganic halide perovskite materials, which have enhanced quantum confinement effects, and particularly focused on the recently synthesized trimethylsulfonium (TMS) lead triiodide (CH3)3SPbI3. Using supercomputer simulations, the team first showed that stripping the (CH3)3S or TMS organic ligands from the TMS PbI3 perovskite nanowires results in semi-metallic PbI3 columns, which contradicts the conventional assumption of the semiconducting or insulating characteristics of the inorganic perovskite framework. Utilizing the semi-metallic PbI3 inorganic framework as the electrode, the team designed a tunneling junction device from perovskite nanowires and found that they exhibit excellent nonlinear negative differential resistance (NDR) behavior. The NDR property is a key to realizing next-generation, ultra-low-power, and multivalued non-linear devices. Furthermore, the team found that this NDR originates from a novel mechanism that involves the quantum-mechanical hybridization between channel and electrode states. Professor Kim said, “This research demonstrates the potential of quantum mechanics-based computer simulations to lead developments in advanced nanomaterials and nanodevices. In particular, this research proposes a new direction in the development of a quantum mechanical tunneling device, which was the topic for which the Nobel Laureate in Physics in 1973 was awarded to Dr. Leo Esaki. This research, led by Dr. Muhammad Ejaz Khan and PhD candidate Juho Lee, was published online in Advanced Functional Materials (10.1002/adfm.201807620) on January 7, 2019. Figure. The draft version of the cover page of 'Advanced Functional Materials'
마지막 페이지 1
KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
Copyright(C) 2020, Korea Advanced Institute of Science and Technology,
All Rights Reserved.