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KAIST Develops a Method to Transfer Graphene by Stamping
Professor Sung-Yool Choi’s research team from KAIST's Department of Electrical Engineering has developed a technique that can produce a single-layer graphene from a metal etching. Through this, transferring a graphene layer onto a circuit board can be done as easily as stamping a seal on paper. The research findings were published in the January 14th issue of Small as the lead article. This technology will allow different types of wafer transfer methods such as transfer onto a surface of a device or a curved surface, and large surface transfer onto a 4 inch wafer. It will be applied in the field of wearable smart gadgets through commercialization of graphene electronic devices. The traditional method used to transfer graphene onto a circuit board is a wet transfer. However, it has some drawbacks as the graphene layer can be damaged or contaminated during the transfer process from residue from the metal etching. This may affect the electrical properties of the transferred graphene. After a graphene growth substrate formed on a catalytic metal substrate is pretreated in an aqueous poly vinyl alcohol (PVA) solution, a PVA film forms on the pretreated substrate. The substrate and the graphene layers bond strongly. The graphene is lifted from the growth substrate by means of an elastomeric stamp. The delaminated graphene layer is isolated state from the elastomeric stamp and thus can be freely transferred onto a circuit board. As the catalytic metal substrate can be reused and does not contain harmful chemical substances, such transfer method is very eco-friendly. Professor Choi said, “As the new graphene transfer method has a wide range of applications and allows a large surface transfer, it will contribute to the commercialization of graphene electronic devices.” He added that “because this technique has a high degree of freedom in transfer process, it has a variety of usages for graphene and 2 dimensional nano-devices.” This research was sponsored by the Ministry of Science, ICT and Future Planning, the Republic of Korea. Figure 1. Cover photo of the journal Small which illustrates the research findings Figure 2. Above view of Graphene layer transferred through the new method Figure 3. Large surface transfer of Graphene
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